垂直MRAM的新型u型磁屏蔽

T. Watanabe, S. Yamamichi
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引用次数: 5

摘要

我们开发了一种u形磁屏蔽,用于封装垂直磁阻随机存取存储器(mram),并确定了一种无取向硅钢在制造和磁性方面最适合这种屏蔽。这种屏蔽材料的使用抑制了高达300[Oe]的外部磁场的磁通饱和,超过了250[Oe]的目标。因此,磁源可以放置在距离屏蔽MRAM 1厘米的地方。MRAM芯片的封装方式是将屏蔽层分成两部分,然后依次安装下部、芯片和上部。当零件之间的间隙为20[μm],间隙的磁导率为30时,仍然可以达到目标性能。因此,这种屏蔽层有望用于高速、低功耗mram。
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A novel U-shaped magnetic shield for perpendicular MRAM
We have developed a U-shaped magnetic shield for packaging perpendicular magnetoresistive random access memories (MRAMs) and have determined that a non-oriented silicon steel is best suited for this shield in terms of fabrication and magnetic properties. Use of this shield material suppressed magnetic flux saturation for an external magnetic field of up to 300[Oe], which exceeds the target of 250[Oe]. A magnetic source can thus be placed as close as 1 cm to a shielded MRAM. An MRAM chip is packaged by separating the shield into two parts and then mounting the lower part, the chip, and the upper part in sequence. If the gap between the parts is 20[μm] and the permeability of the gap is 30, the target performance is still achieved. This shield is thus promising for high-speed, low-power MRAMs.
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