A revision of the theory of THz detection by MOS-FET in the light of the self-mixing model in the substrate

In this paper we reconsider the theory of the THz detection in a MOS-FET structure in the optic of new model of the self-mixing rectification process occurring in depleted portion of a semiconductors. Technology Computer-Aided Design software simulations, using the Harmonic Balance analysis, will be adopted as evaluation tool. The proposed considerations suggest that self-mixing effect in the substrate can be more relevant in determining the rectification process. In the authors opinion, this approach substantially improves understanding of the THz rectification in semiconductors and in particular in MOS-FET structures.