溅射Cu2Si1−xSnxS3 [CSTS]用于富地薄膜光伏的研究

2010 35th IEEE Photovoltaic Specialists Conference Pub Date : 2010-06-20 DOI:10.1109/PVSC.2010.5616634

E. Lund, Jeffrey L. Johnson, W. M. Hlaing Oo, M. Scarpulla

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引用次数: 1

摘要

本文研究了用于光伏太阳能电池吸收层的黄铜矿Cu2Si1−xSnxS3 (CSTS)薄膜的合成。初步结果表明，Cu、Sn和Si的层状溅射后，在500℃的硫气氛中退火，不能提供足够的混合或硫掺入。退火/硫化Cu, Sn和S的均匀共溅射膜导致CSTS的形成，尽管低硫掺入和不希望的硫化铜相形成得到了解决。硫化物靶的溅射可能导致CSTS的形成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigating sputtered Cu2Si1−xSnxS3 [CSTS] for earth abundant thin film photovoltaics

This study investigates the synthesis of chalcopyrite Cu2Si1−xSnxS3 (CSTS) thin films for photovoltaic solar cell absorber layers. Preliminary results indicate that layered sputtering of Cu, Sn, and Si followed by annealing in a sulfur atmosphere at 500°C does not provide adequate mixing or sulfur incorporation. Annealing/sulfurizing a homogeneous co-sputtered film of Cu, Sn, and S lead to CSTS formation, although low sulfur incorporation and undesired copper sulfide phase formation resolved. Sputtering from sulfide targets may lead to formation of CSTS.

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2010 35th IEEE Photovoltaic Specialists Conference

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