Ni硅化物的形成:利用Ge和Pt研究其扩散种类、横向生长和弛豫机制

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI:10.1109/IITC-MAM.2015.7325661

M. El Kousseifi, K. Hoummada, T. Epicier, D. Mangelinck

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引用次数: 1

摘要

利用原位x射线衍射、APT和透射电镜，在Ni薄膜和Si衬底之间沉积一层Ge (1 nm)薄层或Ni(10%Pt)薄膜，研究了Ni硅化物的形成。Ge被用作硅化镍形成过程中扩散物种的标记，Ni(10%Pt)可以显示NiSi的横向生长。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ni silicides formation: Use of Ge and Pt to study the diffusing species, lateral growth and relaxation mechanisms

The Ni silicide formation was studied by in situ X-ray diffraction, APT and TEM through the use of either a thin layer of Ge (1 nm) deposited between the Ni film and a Si substrate or a Ni(10%Pt) film. The Ge was used as a marker for the diffusing species during Ni silicide formation and the Ni(10%Pt) allows revealing the lateral growth of NiSi.

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2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

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