时间交错开关模式下并联SiC半导体的有源电流平衡

David Reiff, Simon Johannliemke, V. Staudt
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引用次数: 1

摘要

当今的宽带隙(WBG),快速开关功率半导体(如SiC和GaN)的陡峭电压斜率导致了长电缆反射的其他挑战,从而导致感性负载过电压。为了使这些逆变器与电机一起使用,无需特别加强绝缘,电压斜率需要减慢。本文提出了一种新型的低损耗对抗方法,该方法通过相间变压器将两个半桥并联。对于这种情况,一个半桥相对于另一个半桥是通过调谐到谐振电路的延迟而延迟的。由于电压对称性的非理想性,在相间互感器的交叉电流中会出现不希望出现的直流分量。随后的直流磁化最终会导致磁芯饱和。本文介绍了定时不准确对磁芯的影响,以及确定磁芯尺寸时应注意的问题。此外,本文还介绍了一种使用闭环控制来处理不需要的电流分量的方法。为此,使用了一种特殊的差模分流器,可以专门测量交叉电流平均值,并减轻开关频率的影响。最后,给出了控制器的概念。该控制器在500kva SiC逆变器试验台上进行了实现和验证。
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Active Current Balancing for Paralleled SiC Semiconductors in Time-Staggered Switching Mode
The steep voltage slopes of today’s wide-bandgap (WBG), fast-switching power semiconductors — like SiC and GaN — lead amongst other challenges to reflection on long cables and thereby overvoltage at inductive loads. To enable the use of these inverters with motors without specially reinforced insulation the voltage slopes need to be slowed down. This article presents a new low-loss countermeasure, which involves the parallel connection of two half-bridges via an interphase transformer. For this one half-bridge is delayed relative to the other one by a delay tuned to a resonant circuit. Undesired DC components in the cross-current of the interphase transformer occur due to non-idealities in the voltage symmetry. The subsequent DC magnetization ultimately can cause the core to saturate. The paper describes the effects due to inaccurate timings and the aspects to keep in mind when dimensioning the magnetic core. Also, this article describes an approach to deal with the undesired current components using a closed-loop control. For that, a special differential-mode shunt is used which enables a dedicated measurement of the cross-current mean value and mitigates the influence of the switching frequency. Finally, the controller concept is presented. The controller is implemented and verified on a 500 kVA SiC inverter test bench.
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发文量
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审稿时长
24 weeks
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