明天的高质量soc需要今天的高质量嵌入式存储器

Ulf Schlichtmann
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引用次数: 10

摘要

只提供摘要形式。嵌入式存储器越来越主导SoC设计-无论是芯片面积,性能,功耗,制造良率还是设计时间都被考虑在内。ITRS数据表明,到本世纪末,集成电路在50纳米节点上的嵌入式存储器容量可能会从1999年的20%增加到90%。因此,未来SoC设计的成功将比目前更依赖于高质量嵌入式存储器的可用性。先进的工艺技术为满足这些质量标准提出了新的挑战。其中一些挑战是:为嵌入式ram提供灵活的冗余解决方案;在泄漏电流不断增加的情况下设计具有竞争力的存储器;降低SRAM对软错误率(SER)的敏感性。这些挑战带来了对嵌入式存储器设计的重大创新的需求,比最近的前几代工艺要多得多。在报告中,概述了挑战并提出了解决方案。讨论的重点是SRAM/ROM,但也讨论了其他技术,如eDRAM和“1T SRAM”。
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Tomorrows high-quality SoCs require high-quality embedded memories today
Summary form only given. Embedded memories increasingly dominate SoC designs - whether chip area, performance, power consumption, manufacturing yield or design time are considered. ITRS data indicate that the embedded memory contents of ICs may increase from 20% in 1999 to 90% at the 50 nm node by the end of the decade. Therefore, even more than at present, the success of future SoC design will depend on the availability of high-quality embedded memories. Advanced process technologies pose new challenges for meeting these quality criteria. Some of the challenges are: providing flexible redundancy solutions for embedded SRAMs; designing competitive memories despite ever increasing leakage currents; reducing SRAM susceptibility to soft-error rate (SER). These challenges are bringing about the need for significant innovations in design of embedded memories, much more so than in recent previous process generations. In the presentation, the challenges are outlined and solutions are proposed. The focus of the discussion is on SRAM/ROM, but other technologies such as eDRAM and "1T SRAM" are also addressed.
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