M. Váry, J. Huran, M. Perný, M. Mikolasek, V. Šály, J. Packa, A. Kobzev
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Study of Al/a-SiC/c-Si(p)/Al structure prepared by PECVD
The heterojunction structure which consists of amorphous SiC layer deposited on p-type silicon substrate was prepared at various substrate temperatures and studied to optimize the technology and improve the quality of the interface. Rutherford Backscattering Spectroscopy (RBS) and Elastic Recoil Detection (ERD) structural analysis was employed in determination the concentrations of elements. Current-voltage (I-V) measurements were processed in order to obtained basic electric and PV parameters of prepared samples. Biased impedance spectra of Al/a-SiC/c-Si(p)/Al heterojunction in the dark are reported and analyzed. AC measurements in the dark conditions were processed in order to identify electronic behavior using equivalent AC circuit which was suggested and obtained by fitting of measured impedance data. A phenomenon of negative capacitance/resistance in certain frequency range has been observed.
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