紧凑型自旋传递扭矩非易失性触发器设计的电源门结构

Karim Ali, Fei Li, S. Lua, C. Heng
{"title":"紧凑型自旋传递扭矩非易失性触发器设计的电源门结构","authors":"Karim Ali, Fei Li, S. Lua, C. Heng","doi":"10.1109/APCCAS.2016.7803911","DOIUrl":null,"url":null,"abstract":"This paper proposes a compact spin transfer torque non-volatile flip-flop (STT-NVFF) design. The proposed NVFF adds four transistors and two complementary magnetic tunnel junctions (MTJs) over a standard volatile flip-flop with only 18% area overhead. The NVFF utilizes a low power/ fast switching MTJ that permits the elimination of the write circuitry existing in conventional STT-NVFFs. The proposed NVFF is at least 80% smaller area than conventional STT-NVFFs that uses write circuitry with, at least, the same energy efficiency. It achieves a low backup energy of 111 fJ and restore energy of 6.9 fJ within 3 ns and 0.16 ns respectively. Moreover, it realizes a 72% reduction in break-even point (BEP) and a 10% area reduction compared to an STT-NVFF employing the latch as a writer.","PeriodicalId":6495,"journal":{"name":"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Compact spin transfer torque non-volatile flip flop design for power-gating architecture\",\"authors\":\"Karim Ali, Fei Li, S. Lua, C. Heng\",\"doi\":\"10.1109/APCCAS.2016.7803911\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes a compact spin transfer torque non-volatile flip-flop (STT-NVFF) design. The proposed NVFF adds four transistors and two complementary magnetic tunnel junctions (MTJs) over a standard volatile flip-flop with only 18% area overhead. The NVFF utilizes a low power/ fast switching MTJ that permits the elimination of the write circuitry existing in conventional STT-NVFFs. The proposed NVFF is at least 80% smaller area than conventional STT-NVFFs that uses write circuitry with, at least, the same energy efficiency. It achieves a low backup energy of 111 fJ and restore energy of 6.9 fJ within 3 ns and 0.16 ns respectively. Moreover, it realizes a 72% reduction in break-even point (BEP) and a 10% area reduction compared to an STT-NVFF employing the latch as a writer.\",\"PeriodicalId\":6495,\"journal\":{\"name\":\"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APCCAS.2016.7803911\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS.2016.7803911","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

摘要

提出了一种紧凑的自旋传递转矩非易失性触发器(STT-NVFF)设计。拟议的NVFF在一个标准的易失性触发器上增加了四个晶体管和两个互补磁隧道结(mtj),面积开销仅为18%。NVFF采用低功耗/快速开关MTJ,消除了传统stt -NVFF中存在的写电路。与使用写入电路的传统stt -NVFF相比,该NVFF的面积至少缩小了80%,但至少具有相同的能效。在3 ns和0.16 ns内分别实现了111 fJ的低备份能量和6.9 fJ的恢复能量。此外,与使用锁存器作为写入器的STT-NVFF相比,它实现了72%的盈亏平衡点(BEP)减少和10%的面积减少。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Compact spin transfer torque non-volatile flip flop design for power-gating architecture
This paper proposes a compact spin transfer torque non-volatile flip-flop (STT-NVFF) design. The proposed NVFF adds four transistors and two complementary magnetic tunnel junctions (MTJs) over a standard volatile flip-flop with only 18% area overhead. The NVFF utilizes a low power/ fast switching MTJ that permits the elimination of the write circuitry existing in conventional STT-NVFFs. The proposed NVFF is at least 80% smaller area than conventional STT-NVFFs that uses write circuitry with, at least, the same energy efficiency. It achieves a low backup energy of 111 fJ and restore energy of 6.9 fJ within 3 ns and 0.16 ns respectively. Moreover, it realizes a 72% reduction in break-even point (BEP) and a 10% area reduction compared to an STT-NVFF employing the latch as a writer.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
IoT and Blockchain: Technologies, Challenges, and Applications Teaching Practice Platform and Innovation Course Construction for Postgraduate Majoring in Electronics Information FPGA implementation of edge detection for Sobel operator in eight directions Analog integrated audio frequency synthesizer Analysis of non-ideal effects and electrochemical impedance spectroscopy of arrayed flexible NiO-based pH sensor
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1