基于遗传算法的CMOS浮栅缺陷模拟诊断

W. Y. Chiew, S. Binti, A. Radzi
{"title":"基于遗传算法的CMOS浮栅缺陷模拟诊断","authors":"W. Y. Chiew, S. Binti, A. Radzi","doi":"10.1109/SMELEC.2008.4770353","DOIUrl":null,"url":null,"abstract":"As manufacturers go into volume production with 90 nm designs and below, the floating gate defect (FGD) diagnosis has become a challenge in the initial yield ramp. Since floating gate can result in state-holding, intermittent and pattern-dependent fault effects, these models are generally more complex. Consequently, logical testing is proven can not guarantee the detection of the defect. In this paper, analogue diagnosis to the defect based on defective current is proposed. The magnitude of abnormal increased of power supply current is mainly subjected to the specific location in the Circuit Under Test (CUT), magnitude of input voltage and its sequence. Current open defect diagnosis methods are either keep repeating the circuit simulation based on try and error technique which is tedious or consider part of the factors only for the defect. Thus, the diagnosis results from current procedures may not be as accurate as possible and fully covered. In the proposed method, the significant difference of defective current and the magnitude of voltage supply in sequence are considered using optimization of genetic algorithms (GAs). Results show that the proposed method can achieve a very high diagnosis accuracy and simulation time.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"25 1","pages":"414-417"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analogue diagnosis of CMOS floating gate defect (FGD) using Genetic Algorithms (GAs)\",\"authors\":\"W. Y. Chiew, S. Binti, A. Radzi\",\"doi\":\"10.1109/SMELEC.2008.4770353\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As manufacturers go into volume production with 90 nm designs and below, the floating gate defect (FGD) diagnosis has become a challenge in the initial yield ramp. Since floating gate can result in state-holding, intermittent and pattern-dependent fault effects, these models are generally more complex. Consequently, logical testing is proven can not guarantee the detection of the defect. In this paper, analogue diagnosis to the defect based on defective current is proposed. The magnitude of abnormal increased of power supply current is mainly subjected to the specific location in the Circuit Under Test (CUT), magnitude of input voltage and its sequence. Current open defect diagnosis methods are either keep repeating the circuit simulation based on try and error technique which is tedious or consider part of the factors only for the defect. Thus, the diagnosis results from current procedures may not be as accurate as possible and fully covered. In the proposed method, the significant difference of defective current and the magnitude of voltage supply in sequence are considered using optimization of genetic algorithms (GAs). Results show that the proposed method can achieve a very high diagnosis accuracy and simulation time.\",\"PeriodicalId\":6406,\"journal\":{\"name\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"25 1\",\"pages\":\"414-417\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2008.4770353\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2008.4770353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

随着制造商开始批量生产90纳米及以下的设计,在初始良率坡道中,浮栅缺陷(FGD)的诊断已经成为一个挑战。由于浮栅可能导致状态保持、间歇和模式依赖的故障效应,这些模型通常更复杂。因此,逻辑测试被证明不能保证缺陷的检测。本文提出了基于缺陷电流的缺陷模拟诊断方法。电源电流异常增大的幅度主要受被测电路(CUT)中的特定位置、输入电压的大小及其顺序的影响。现有的开路缺陷诊断方法要么是基于繁琐的试错法反复进行电路仿真,要么是只考虑开路缺陷的部分因素。因此,当前程序的诊断结果可能不够准确和完全覆盖。在该方法中,利用遗传算法优化,考虑了缺陷电流的显著差异和顺序供电电压的大小。结果表明,该方法具有很高的诊断精度和仿真时间。
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Analogue diagnosis of CMOS floating gate defect (FGD) using Genetic Algorithms (GAs)
As manufacturers go into volume production with 90 nm designs and below, the floating gate defect (FGD) diagnosis has become a challenge in the initial yield ramp. Since floating gate can result in state-holding, intermittent and pattern-dependent fault effects, these models are generally more complex. Consequently, logical testing is proven can not guarantee the detection of the defect. In this paper, analogue diagnosis to the defect based on defective current is proposed. The magnitude of abnormal increased of power supply current is mainly subjected to the specific location in the Circuit Under Test (CUT), magnitude of input voltage and its sequence. Current open defect diagnosis methods are either keep repeating the circuit simulation based on try and error technique which is tedious or consider part of the factors only for the defect. Thus, the diagnosis results from current procedures may not be as accurate as possible and fully covered. In the proposed method, the significant difference of defective current and the magnitude of voltage supply in sequence are considered using optimization of genetic algorithms (GAs). Results show that the proposed method can achieve a very high diagnosis accuracy and simulation time.
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