提高28nm及以上节点光刻系统成像能力的SMO工艺研究

H. Yu, Yueyu Zhang, Bin-Jie Jiang, Shirui Yu, Zhibiao Mao
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引用次数: 0

摘要

源掩模优化(SMO)解决方案已成为分辨率增强技术(RET)的重要分支之一,它可以扩展下一代计算光刻的成像过程窗口,从而提高集成电路代工制造中光刻系统的成像能力。基于Mentor Graphics公司提供的SMO软件RET Selection,我们研究了提高28nm及以上节点光刻系统成像能力的SMO工艺:关键图案的选择、工艺窗口条件的确定等。本文利用PV波段、MEEF、NILS和DOF等参数对自由形式光源进行了评价,并对ASML扫描仪生成的最终光源进行了验证。
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Research of SMO process to improve the imaging capability of lithography system for 28nm node and beyond
The source-mask optimization (SMO) solution has become one of the most important branches of Resolution enhancement techniques (RET) to extend the imaging process window with next generation computation lithography, which improve the imaging capability of lithographic systems in the integrated circuit foundry manufacturing. Based on the SMO software RET Selection provided by Mentor Graphics Corporation, we have researched the SMO process to improve the imaging capability of lithographic systems for 28nm node and beyond: choosing the key patterns, confirming the process window conditions and so on. In this paper, the parameters PV band, MEEF, NILS and DOF have been used to evaluate the free form illumination sources, and the final illumination source have been verified, which generated by ASML scanner.
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