垂直自对准混合硅光子倒装芯片激光集成

A. Moscoso-Mártir, F. Merget, J. Mueller, J. Hauck, S. Romero-García, B. Shen, F. Lelarge, R. Brenot, A. Garreau, E. Mentovich, A. Sandomirsky, A. Badihi, D. Rasmussen, R. Setter, J. Witzens
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引用次数: 24

摘要

我们提出了一种倒装芯片集成工艺,在这种工艺中,垂直对准是通过蚀刻在硅光子学芯片和激光或半导体光学放大器的凹槽中定义的基座之间的机械接触来保证的。通过选择性蚀刻到III-V材料的活性区域,我们可以使垂直对准的精度独立于硅光子或III-V芯片制造过程中对层厚度的工艺控制,使垂直(Z-)方向的对准公差低于±10 nm。
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Hybrid silicon photonics flip-chip laser integration with vertical self-alignment
We present a flip-chip integration process in which the vertical alignment is guaranteed by a mechanical contact between pedestals defined in a recess etched into a silicon photonics chip and a laser or semiconductor optical amplifier. By selectively etching up to the active region of the III-V materials, we can make the accuracy of vertical alignment independent on the process control applied to layer thicknesses during silicon photonics or III-V chip fabrication, enabling alignment tolerances below ±10 nm in the vertical (Z-)direction.
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