无掩膜纳米材料蚀刻用微等离子体器件阵列的研制

L. Wen, Han Xie, J. Chu, Hai Wang
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引用次数: 0

摘要

本文报道了一种基于微等离子体器件阵列的新型无掩膜纳米材料刻蚀方法。即将倒金字塔微等离子体器件阵列集成到扫描探针尖端阵列中,实现无掩膜纳米材料刻蚀,具有高效率、大面积、低成本的优点。采用MEMS工艺成功制备了微腔尺寸为50μm的4×4倒金字塔型微等离子体器件阵列。实验结果表明,该微等离子体阵列在直流激励下可以在稀有气体氩中点火。电气测试系统中的镇流器电阻在器件阵列点火中起着重要的作用。在10kpa氩气下,器件阵列的V-I特性处于负辉光放电模式。本研究为未来无掩膜微等离子体纳米材料刻蚀奠定了良好的基础。
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Development of microplasma devices arrays for maskless nanoscale material etching
This paper reports a novel maskless nanoscale material etching method based on microplasma devices arrays. That is, inverted pyramidal microplasma devices arrays are integrated into the scanning probe tips array to realize maskless nanoscale material etching with advantages of high efficiency, large area and low cost. A 4×4 inverted pyramidal microplasma device array with each microcavity dimension of 50μm was successfully fabricated by MEMS process. Experiment results showed that the microplasma devices arrays could ignite in rare gas Ar under dc excitation. Ballast resistance in electrical testing system played an important roles in device array ignitions. V-I characteristics of the device array at 10kpa of Ar was in negative glow discharge mode. This work may lay a good foundation for future maskless microplasma nanoscale material etching.
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