慢前过电压下低压压敏电阻响应的建模

L. Muremi, P. Bokoro, W. Doorsamy
{"title":"慢前过电压下低压压敏电阻响应的建模","authors":"L. Muremi, P. Bokoro, W. Doorsamy","doi":"10.3390/electronicmat4020006","DOIUrl":null,"url":null,"abstract":"In this study, commercially low-voltage MOVs are exposed to switching surges to analyse and model the relationship between the number of surges and the MOV grain barrier height response. Repeated slow-front overvoltage transients are used to degrade the protective qualities of metal oxide surge arrester devices, affecting their reliability and stability. A total of 360 MOVs with similar specifications from three different manufacturers are degraded under switching surges at a constant temperature of 60 °C. The reference voltage and C-V characteristics of MOVs are measured before and after the degradation process to analyse the MOVs’ conditions. Grain barrier heights are determined from the C-V characteristics curve. An F-statistical analysis is then applied to analyse the effects of number of surges on the grain barrier height. The T-test is used to assess the statistical difference between the tested groups. Linear regression analysis is then applied to model the relationship between the number of surges and MOV grain barrier height. The results obtained show that the number of surges has a significant impact on grain barrier height. MOV grain barrier height is found to decrease as the number of surges applied increases. Regression models obtained for the tested MOV groups across all three manufacturers agree and indicate that the reduction in grain barrier height results from an increased number of surges. Regression coefficients of a developed model indicate that for one surge applied, the MOV grain barrier height decreases by 0.024, 0.055, and 0.033 eV/cm for manufacturers X, Y, and Z, respectively. Therefore, there is a linear relationship between grain barrier height and the number of applied switching surges.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modelling of Low-Voltage Varistors’ Responses under Slow-Front Overvoltages\",\"authors\":\"L. Muremi, P. Bokoro, W. Doorsamy\",\"doi\":\"10.3390/electronicmat4020006\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, commercially low-voltage MOVs are exposed to switching surges to analyse and model the relationship between the number of surges and the MOV grain barrier height response. Repeated slow-front overvoltage transients are used to degrade the protective qualities of metal oxide surge arrester devices, affecting their reliability and stability. A total of 360 MOVs with similar specifications from three different manufacturers are degraded under switching surges at a constant temperature of 60 °C. The reference voltage and C-V characteristics of MOVs are measured before and after the degradation process to analyse the MOVs’ conditions. Grain barrier heights are determined from the C-V characteristics curve. An F-statistical analysis is then applied to analyse the effects of number of surges on the grain barrier height. The T-test is used to assess the statistical difference between the tested groups. Linear regression analysis is then applied to model the relationship between the number of surges and MOV grain barrier height. The results obtained show that the number of surges has a significant impact on grain barrier height. MOV grain barrier height is found to decrease as the number of surges applied increases. Regression models obtained for the tested MOV groups across all three manufacturers agree and indicate that the reduction in grain barrier height results from an increased number of surges. Regression coefficients of a developed model indicate that for one surge applied, the MOV grain barrier height decreases by 0.024, 0.055, and 0.033 eV/cm for manufacturers X, Y, and Z, respectively. Therefore, there is a linear relationship between grain barrier height and the number of applied switching surges.\",\"PeriodicalId\":18610,\"journal\":{\"name\":\"Modern Electronic Materials\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Modern Electronic Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3390/electronicmat4020006\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Modern Electronic Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3390/electronicmat4020006","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

在本研究中,将商用低压MOV暴露于开关浪涌中,分析浪涌数量与MOV晶粒势垒高度响应之间的关系并建立模型。重复的慢前过电压瞬变会降低金属氧化物避雷器的保护质量,影响避雷器的可靠性和稳定性。在60°C的恒温开关浪涌下,来自三家不同制造商的360个类似规格的MOVs被降解。在退化过程前后测量了MOVs的基准电压和C-V特性,分析了MOVs的状态。根据C-V特性曲线确定颗粒势垒高度。然后应用f统计分析来分析浪涌数对颗粒势垒高度的影响。t检验用于评估被测组之间的统计差异。利用线性回归分析建立了浪涌数与MOV颗粒势垒高度之间的关系模型。结果表明,浪涌数对颗粒势垒高度有显著影响。MOV晶粒势垒高度随着浪涌次数的增加而降低。对所有三家制造商测试的MOV组获得的回归模型一致,并表明颗粒屏障高度的降低是由于浪涌数量的增加。模型的回归系数表明,当施加一个浪涌时,制造商X、Y和Z的MOV颗粒屏障高度分别降低0.024、0.055和0.033 eV/cm。因此,颗粒势垒高度与施加的开关浪涌数量之间存在线性关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Modelling of Low-Voltage Varistors’ Responses under Slow-Front Overvoltages
In this study, commercially low-voltage MOVs are exposed to switching surges to analyse and model the relationship between the number of surges and the MOV grain barrier height response. Repeated slow-front overvoltage transients are used to degrade the protective qualities of metal oxide surge arrester devices, affecting their reliability and stability. A total of 360 MOVs with similar specifications from three different manufacturers are degraded under switching surges at a constant temperature of 60 °C. The reference voltage and C-V characteristics of MOVs are measured before and after the degradation process to analyse the MOVs’ conditions. Grain barrier heights are determined from the C-V characteristics curve. An F-statistical analysis is then applied to analyse the effects of number of surges on the grain barrier height. The T-test is used to assess the statistical difference between the tested groups. Linear regression analysis is then applied to model the relationship between the number of surges and MOV grain barrier height. The results obtained show that the number of surges has a significant impact on grain barrier height. MOV grain barrier height is found to decrease as the number of surges applied increases. Regression models obtained for the tested MOV groups across all three manufacturers agree and indicate that the reduction in grain barrier height results from an increased number of surges. Regression coefficients of a developed model indicate that for one surge applied, the MOV grain barrier height decreases by 0.024, 0.055, and 0.033 eV/cm for manufacturers X, Y, and Z, respectively. Therefore, there is a linear relationship between grain barrier height and the number of applied switching surges.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
0.60
自引率
0.00%
发文量
0
期刊最新文献
Synaptic behavior of a composite multiferroic heterostructure FeBSiC – PZT at resonant excitation Optically transparent highly conductive contact based on ITO and copper metallization for solar cells Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobate Crystalline structure of 0.65BiFeO3–0.35Ba1-xSrxTiO3 solid solutions in the vicinity of the morphotropic phase boundary Synthesis and piezoelectric properties of freestanding ferroelectric films based on barium strontium titanate
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1