A. Arias, P. Rowell, M. Urteaga, Z. Griffith, K. Shinohara, J. Bergman, A. Carter, R. Pierson, B. Brar, J. Buckwalter, M. Rodwell
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185mW InP HBT Power Amplifier with 1 Octave Bandwidth (2550GHz), 38% peak PAE at 44GHz and Chip Area of 276 x 672 μm2
We report a 250nm InP HBT MMIC that demonstrates record output power at 44 GHz for its chip size, having a small signal bandwidth of 25 - 50 GHz, and operating from a 2.5-2.8 V supply. The reported power amplifier delivers up to 185 mW and has a peak PAE of 38% at 44 GHz. The results in this work highlight the relevance of 250nm InP HBT devices for emerging size-constrained platforms including MIMO communication front-ends and radar applications.
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