用于宽带中红外光子学的紧凑低损耗绝缘体上硅波导

2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) Pub Date : 2017-07-31 DOI:10.1109/CLEOPR.2017.8118901

B. Dong, Xianshu Luo, Hong Wang, Chengkuo Lee, G. Lo

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引用次数: 0

摘要

近红外纳米光子学因其在解决互连瓶颈问题[1]和实现高品质因数的基于谐振器的传感器[2][3]方面的潜力而得到了大量的研究。在已应用于近红外纳米光子学的各种材料平台中，绝缘体上硅(silicon-on-insulator, SOI)平台具有光模约束高、损耗低、CMOS兼容、制作成熟等优点[4]。

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Compact low loss silicon-on-insulator waveguide for broadband mid-infrared photonics

Near-infrared nanophotonics has been massively studied due to its promising ability in addressing the interconnect bottleneck problem [1] and achieving resonator-based sensors with high quality factor [2] [3]. Among the various material platforms that have been applied in near infrared nanophotonics, silicon-on-insulator (SOI) platform offers advantages such as high optical mode confinement, low loss, CMOS compatibility, and mature fabrication [4].

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2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)

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