A. Anusha, Chithra Parameswaran, P. Revathi, V. Velmurugan
{"title":"硅干、湿氧化TCAD过程的数值模拟","authors":"A. Anusha, Chithra Parameswaran, P. Revathi, V. Velmurugan","doi":"10.1109/ICANMEET.2013.6609351","DOIUrl":null,"url":null,"abstract":"The oxide thickness is of great concern today. The basic idea is to grow SiO2 layer on Silicon. The oxide is grown on intrinsic silicon substrate by thermal oxidation i.e., wet oxidation and dry oxidation. The thickness is compared for both the oxidation processes after different oxidation cycles. The capacitance per unit length is also calculated for the oxide growth in above. The percentage oxide thickness is also estimated and the oxide is found to grow more into the substrate with time and number of cycles.","PeriodicalId":13708,"journal":{"name":"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies","volume":"210 1","pages":"513-516"},"PeriodicalIF":0.0000,"publicationDate":"2013-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Numerical simulation of dry and wet oxidation of Silicon by TCAD Sprocess\",\"authors\":\"A. Anusha, Chithra Parameswaran, P. Revathi, V. Velmurugan\",\"doi\":\"10.1109/ICANMEET.2013.6609351\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The oxide thickness is of great concern today. The basic idea is to grow SiO2 layer on Silicon. The oxide is grown on intrinsic silicon substrate by thermal oxidation i.e., wet oxidation and dry oxidation. The thickness is compared for both the oxidation processes after different oxidation cycles. The capacitance per unit length is also calculated for the oxide growth in above. The percentage oxide thickness is also estimated and the oxide is found to grow more into the substrate with time and number of cycles.\",\"PeriodicalId\":13708,\"journal\":{\"name\":\"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies\",\"volume\":\"210 1\",\"pages\":\"513-516\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-07-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICANMEET.2013.6609351\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICANMEET.2013.6609351","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Numerical simulation of dry and wet oxidation of Silicon by TCAD Sprocess
The oxide thickness is of great concern today. The basic idea is to grow SiO2 layer on Silicon. The oxide is grown on intrinsic silicon substrate by thermal oxidation i.e., wet oxidation and dry oxidation. The thickness is compared for both the oxidation processes after different oxidation cycles. The capacitance per unit length is also calculated for the oxide growth in above. The percentage oxide thickness is also estimated and the oxide is found to grow more into the substrate with time and number of cycles.
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