氯化镉辅助CdTe再结晶:退火过度处理的影响

A. Abbas, G. West, J. Bowers, P. Kamiński, B. Maniscalco, J. Walls, K. Barth, W. Sampath
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引用次数: 18

摘要

虽然氯化镉处理是高效碲化镉薄膜光伏器件的必要工艺,但其改善碲化镉层的确切机制尚不完全清楚。处理参数有一个狭窄的窗口,即使稍微偏离这些参数也可能对细胞性能有害。在这项研究中,我们应用先进的微观结构表征技术来研究两个参数的变化:氯化镉处理过程中衬底的温度和处理时间的长短。在这两种情况下,这些设备都被故意过度处理。研究了过处理对紧密间隔升华法制备的碲化镉太阳能电池微观结构的影响及其与电池性能的关系。一系列的技术已经被用来观察微观结构的变化,以及化学和晶体学的变化作为处理参数的函数。还进行了将设备性能与电池微观结构特性联系起来的电气测试。所使用的技术包括用于亚颗粒分析的透射电子显微镜(TEM),用于化学分析的EDX和用于成分深度分析的XPS。
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Cadmium chloride assisted re-crystallization of CdTe: The effect of annealing over-treatment
Although the cadmium chloride treatment is an essential process for high efficiency thin film cadmium telluride photovoltaic devices, the precise mechanisms involved that improve the cadmium telluride layer are not fully understood. The treatment parameters have a narrow window, deviating from these even slightly can be detrimental to cell performance. In this investigation we apply advanced microstructural characterization techniques to study the effects of varying two parameters: the temperature of the substrate during the cadmium chloride treatment and the length of time of the treatment. In both cases, the devices have been deliberately over-treated. The effect of the over-treatment on the microstructure of cadmium telluride solar cells, deposited by close spaced sublimation is investigated and related to cell performance. A range of techniques has been used to observe the changes to the microstructure as well as the chemical and crystallographic changes as a function of treatment parameters. Electrical tests that link the device performance with the microstructural properties of the cells have also been undertaken. Techniques used include Transmission Electron Microscopy (TEM) for sub-grain analysis, EDX for chemical analysis and XPS for composition-depth profiling.
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