{"title":"静电执行器谐振驱动电路的设计与分析","authors":"Sangtak Park, Yanhui Bai, J. Yeow","doi":"10.1109/ISOT.2010.5687329","DOIUrl":null,"url":null,"abstract":"Most electrostatic actuators fabricated by MEMS technologies require high actuation voltage and suffer from the pull-in phenomenon in the presence of high parasitic capacitance, either driven by conventional voltage control or charge control. The resonant drive circuit presented in this paper uses much lo wer supply voltage to drive electrostatic actuators, which usually require a high actuation voltage from a high voltage am plifier, through passive amplification at its electrical resonance. Furthermore, it is shown that the resonant drive circuit is able to extend operation range of electrostatic actuators beyond the pull-in point even in the presence of high parasitic capacitance due to its inherent negative feedback. Analytical and numerical models of the resonant drive circuit are derived and built to demonstrate the advantages of the resonant drive circuit implemented with two logic gates arranged in the BTL configuration.","PeriodicalId":91154,"journal":{"name":"Optomechatronic Technologies (ISOT), 2010 International Symposium on : 25-27 Oct. 2010 : [Toronto, ON]. International Symposium on Optomechatronic Technologies (2010 : Toronto, Ont.)","volume":"17 1","pages":"1-6"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Design and analysis of resonant drive circuit for electrostatic actuators\",\"authors\":\"Sangtak Park, Yanhui Bai, J. Yeow\",\"doi\":\"10.1109/ISOT.2010.5687329\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Most electrostatic actuators fabricated by MEMS technologies require high actuation voltage and suffer from the pull-in phenomenon in the presence of high parasitic capacitance, either driven by conventional voltage control or charge control. The resonant drive circuit presented in this paper uses much lo wer supply voltage to drive electrostatic actuators, which usually require a high actuation voltage from a high voltage am plifier, through passive amplification at its electrical resonance. Furthermore, it is shown that the resonant drive circuit is able to extend operation range of electrostatic actuators beyond the pull-in point even in the presence of high parasitic capacitance due to its inherent negative feedback. Analytical and numerical models of the resonant drive circuit are derived and built to demonstrate the advantages of the resonant drive circuit implemented with two logic gates arranged in the BTL configuration.\",\"PeriodicalId\":91154,\"journal\":{\"name\":\"Optomechatronic Technologies (ISOT), 2010 International Symposium on : 25-27 Oct. 2010 : [Toronto, ON]. International Symposium on Optomechatronic Technologies (2010 : Toronto, Ont.)\",\"volume\":\"17 1\",\"pages\":\"1-6\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optomechatronic Technologies (ISOT), 2010 International Symposium on : 25-27 Oct. 2010 : [Toronto, ON]. International Symposium on Optomechatronic Technologies (2010 : Toronto, Ont.)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISOT.2010.5687329\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optomechatronic Technologies (ISOT), 2010 International Symposium on : 25-27 Oct. 2010 : [Toronto, ON]. International Symposium on Optomechatronic Technologies (2010 : Toronto, Ont.)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISOT.2010.5687329","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

大多数采用MEMS技术制造的静电致动器需要高致动电压,并且在存在高寄生电容的情况下存在拉入现象,无论是由传统的电压控制还是电荷控制驱动。静电致动器通常需要高压放大器的高致动电压,本文提出的谐振驱动电路通过在其电谐振处的无源放大,使用低得多的电源电压来驱动静电致动器。此外,谐振驱动电路由于其固有的负反馈特性,即使在高寄生电容存在的情况下,也能将静电致动器的工作范围扩展到拉入点以外。推导并建立了谐振驱动电路的解析模型和数值模型,以证明采用双逻辑门在BTL结构中实现谐振驱动电路的优点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Design and analysis of resonant drive circuit for electrostatic actuators
Most electrostatic actuators fabricated by MEMS technologies require high actuation voltage and suffer from the pull-in phenomenon in the presence of high parasitic capacitance, either driven by conventional voltage control or charge control. The resonant drive circuit presented in this paper uses much lo wer supply voltage to drive electrostatic actuators, which usually require a high actuation voltage from a high voltage am plifier, through passive amplification at its electrical resonance. Furthermore, it is shown that the resonant drive circuit is able to extend operation range of electrostatic actuators beyond the pull-in point even in the presence of high parasitic capacitance due to its inherent negative feedback. Analytical and numerical models of the resonant drive circuit are derived and built to demonstrate the advantages of the resonant drive circuit implemented with two logic gates arranged in the BTL configuration.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Autofocusing-based visual servoing: Application to MEMS micromanipulation Development of a polymer based fiberoptic magnetostrictive metal detector system. A dual wafer prealigner and a multiple level structure Adaptive particle filter based pose estimation using a monocular camera model Development of an interface based on face orientations for operation of auto-wheelchair
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1