一种新的空间应用3D DRAM记忆体架构

Anthony Agnesina, A. Sidana, James Yamaguchi, Christian Krutzik, J. Carson, J. Yang-Scharlotta, S. Lim
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引用次数: 9

摘要

3D集成电路设计中的第一个主流产品是存储器件,其中多个存储层横向集成,与2D同类产品相比,提供了多方面的改进。不幸的是,这些现有的3D存储立方体都不适合恶劣的空间环境。本文提出了一种新的空间存储立方体架构,基于商用现货(COTS)的垂直集成,3D堆叠,DRAM存储设备与定制的辐射强化设计(RHBD)控制器,提供高存储容量,高可靠性和低延迟。ASIC控制器的验证和评估将在集成3d堆栈的定制fpga仿真平台上进行。
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A Novel 3D DRAM Memory Cube Architecture for Space Applications
The first mainstream products in 3D IC design are memory devices where multiple memory tiers are horizontally integrated to offer manifold improvements compared with their 2D counterparts. Unfortunately, none of these existing 3D memory cubes are ready for harsh space environments. This paper presents a new memory cube architecture for space, based on vertical integration of Commercial-Off-The-Shelf (COTS), 3D stacked, DRAM memory devices with a custom Radiation-Hardened-By-Design (RHBD) controller offering high memory capacity, robust reliability and low latency. Validation and evaluation of the ASIC controller will be conducted prior to tape-out on a custom FPGA-based emulator platform integrating the 3D-stack.
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