蓝宝石晶体边缘定义、薄膜供给生长的生长速率计算

IF 1.5 4区 材料科学 Q3 CRYSTALLOGRAPHY Crystal Research and Technology Pub Date : 2021-04-25 DOI:10.1002/crat.202000244
F. Bruni
{"title":"蓝宝石晶体边缘定义、薄膜供给生长的生长速率计算","authors":"F. Bruni","doi":"10.1002/crat.202000244","DOIUrl":null,"url":null,"abstract":"A new model for the calculation of the growth rate of edge‐defined, film‐fed growth (EFG) crystals is proposed based on surface tension proportional to the area of the crystal/die interface. A comparison to the classical model, which includes a surface tension factor proportional to the length of the crystal's peripheral edge, is shown. Equations are derived that accurately predict the growth rate derived from weight versus time calculations. Examples are shown for various geometries of crystal shape.","PeriodicalId":10797,"journal":{"name":"Crystal Research and Technology","volume":"285 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2021-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Growth Rate Calculations for Edge‐Defined, Film‐Fed Growth of Sapphire Crystals\",\"authors\":\"F. Bruni\",\"doi\":\"10.1002/crat.202000244\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new model for the calculation of the growth rate of edge‐defined, film‐fed growth (EFG) crystals is proposed based on surface tension proportional to the area of the crystal/die interface. A comparison to the classical model, which includes a surface tension factor proportional to the length of the crystal's peripheral edge, is shown. Equations are derived that accurately predict the growth rate derived from weight versus time calculations. Examples are shown for various geometries of crystal shape.\",\"PeriodicalId\":10797,\"journal\":{\"name\":\"Crystal Research and Technology\",\"volume\":\"285 1\",\"pages\":\"\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2021-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystal Research and Technology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/crat.202000244\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystal Research and Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/crat.202000244","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 2

摘要

基于表面张力与晶体/模具界面面积成正比的理论,提出了一种计算边缘定义薄膜生长(EFG)晶体生长速率的新模型。与经典模型的比较,其中包括一个表面张力因子成正比的晶体外围边缘的长度,显示。根据重量与时间的计算,推导出了准确预测增长率的方程。举例说明了晶体形状的各种几何形状。
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Growth Rate Calculations for Edge‐Defined, Film‐Fed Growth of Sapphire Crystals
A new model for the calculation of the growth rate of edge‐defined, film‐fed growth (EFG) crystals is proposed based on surface tension proportional to the area of the crystal/die interface. A comparison to the classical model, which includes a surface tension factor proportional to the length of the crystal's peripheral edge, is shown. Equations are derived that accurately predict the growth rate derived from weight versus time calculations. Examples are shown for various geometries of crystal shape.
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来源期刊
自引率
6.70%
发文量
121
审稿时长
1.9 months
期刊介绍: The journal Crystal Research and Technology is a pure online Journal (since 2012). Crystal Research and Technology is an international journal examining all aspects of research within experimental, industrial, and theoretical crystallography. The journal covers the relevant aspects of -crystal growth techniques and phenomena (including bulk growth, thin films) -modern crystalline materials (e.g. smart materials, nanocrystals, quasicrystals, liquid crystals) -industrial crystallisation -application of crystals in materials science, electronics, data storage, and optics -experimental, simulation and theoretical studies of the structural properties of crystals -crystallographic computing
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