提高mc-Si铸锭质量的锥形沟槽DS块的数值研究

IF 1.5 4区 材料科学 Q3 CRYSTALLOGRAPHY Crystal Research and Technology Pub Date : 2021-09-16 DOI:10.1002/crat.202100018
Aravindan Gurusamy, Srinivasan Manikam, Ramasmy Perumalsamy
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引用次数: 1

摘要

多晶硅太阳能电池占晶体硅太阳能电池产量的62%。它是通过定向凝固过程生长的。凝固控制在定向凝固过程中起着至关重要的作用。在定向凝固块上开锥形槽,使中心区域的出热流比外围区域的出热流强。对多晶硅铸锭的定向凝固过程进行了模拟。第一炉为常规炉,第二炉为30mm × 85mm槽块,第三炉为40mm × 85mm槽块,第四炉为50mm × 85mm槽块,第五炉为60mm × 85mm槽块。常规和改性生长铸锭的最大体积von Mises应力均低于临界值范围。在常规情况下,钢锭体积的7%高于临界应力值,在改进情况下,钢锭体积的2.5%高于临界应力值。在50 mm × 85 mm槽块内结合轴向和径向温度梯度,效果较好。
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Numerical Investigation of Cone Shape Grooved DS Block to Improve the mc–Si Ingot Quality
Multicrystalline silicon solar cells occupy 62% in crystalline silicon solar cell production. It is grown by the directional solidification process. Solidification control has a vital role in directional solidification process. Cone shape groove is made in the directional solidification block to enhance the outgoing heat flux in the center region than the peripheral region. Five directional solidification furnaces are simulated for making a multicrystalline silicon ingot. First furnace is the conventional furnace, the second furnace has 30 mm × 85 mm groove block, the third furnace has 40 mm × 85 mm groove block, the fourth furnace has 50 mm × 85 mm groove block and the fifth furnace has 60 mm × 85 mm groove block. The von Mises stress in the maximum volume of the conventional and modified grown ingots are below the range of critical value. In conventional case 7% of the ingot volume is above critical stress value and in the modified cases 2.5% of the ingot volume is above critical stress value. If axial and radial temperature gradient is combined in the 50 mm × 85 mm groove block leads to better results.
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来源期刊
自引率
6.70%
发文量
121
审稿时长
1.9 months
期刊介绍: The journal Crystal Research and Technology is a pure online Journal (since 2012). Crystal Research and Technology is an international journal examining all aspects of research within experimental, industrial, and theoretical crystallography. The journal covers the relevant aspects of -crystal growth techniques and phenomena (including bulk growth, thin films) -modern crystalline materials (e.g. smart materials, nanocrystals, quasicrystals, liquid crystals) -industrial crystallisation -application of crystals in materials science, electronics, data storage, and optics -experimental, simulation and theoretical studies of the structural properties of crystals -crystallographic computing
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