基于表面电位的薄膜晶体管紧凑模型

2018 International Flexible Electronics Technology Conference (IFETC) Pub Date : 2018-08-01 DOI:10.1109/IFETC.2018.8583907

Ling Li

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引用次数: 0

摘要

非晶ingazno (a-IGZO) tft在柔性显示和透明tft等电路应用中越来越重要。氧化物半导体tft，如a- igzo tft，有望成为构建RFID标签的有前途的候选材料[1]。因此，需要一个电路友好的A - igzo紧凑模型。由于电荷输运机制的不同，a-IGZO TFT的紧凑模型不能直接使用有机TFT或非晶TFT模型[2]。

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Surface Potential Based Compact Model for Thin Film Transistor

Amorphous-InGaZnO (a-IGZO) TFTs are increasingly important for the circuit application, such as flexible display and transparent TFTs. Oxide semiconductor TFTs, such as a-IGZO TFTs, are expected to be a promising candidate constructing RFID tags [1] . A circuit friendly compact model of a-IGZO is therefore required. Due to the different charge transport mechanism, compact model for a-IGZO TFTs cannot directly use organic TFT or amorphous TFT model [2] .

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2018 International Flexible Electronics Technology Conference (IFETC)

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