N. Nakagawa, S. Shibasaki, H. Hiraga, M. Yamazaki, Kazushige Yamamoto, S. Sakurada
{"title":"均匀结CIGS太阳能电池的可行性研究","authors":"N. Nakagawa, S. Shibasaki, H. Hiraga, M. Yamazaki, Kazushige Yamamoto, S. Sakurada","doi":"10.1109/PVSC.2013.6744869","DOIUrl":null,"url":null,"abstract":"The potential for high conversion efficiency of the homojunction Cu(In, Ga)Se2 (CIGS) solar cells was examined by device simulations and experimental approaches. The simulation results showed that many electrons in n-CIGS layers could compensate to some extent for the existence of interface states at i-ZnO/n-CIGS interfaces in the homojunction structure. In the case of using the partial electrolyte treatments of CIGS films to produce the n-type doping, the concentrations of the Cd dopants in the n-CIGS layer were 1016 cm-2. The conversion efficiency of 17.2% for this homojunction CIGS solar cell was obtained.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"34 1","pages":"2023-2025"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Feasibility study of homojunction CIGS solar cells\",\"authors\":\"N. Nakagawa, S. Shibasaki, H. Hiraga, M. Yamazaki, Kazushige Yamamoto, S. Sakurada\",\"doi\":\"10.1109/PVSC.2013.6744869\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The potential for high conversion efficiency of the homojunction Cu(In, Ga)Se2 (CIGS) solar cells was examined by device simulations and experimental approaches. The simulation results showed that many electrons in n-CIGS layers could compensate to some extent for the existence of interface states at i-ZnO/n-CIGS interfaces in the homojunction structure. In the case of using the partial electrolyte treatments of CIGS films to produce the n-type doping, the concentrations of the Cd dopants in the n-CIGS layer were 1016 cm-2. The conversion efficiency of 17.2% for this homojunction CIGS solar cell was obtained.\",\"PeriodicalId\":6350,\"journal\":{\"name\":\"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)\",\"volume\":\"34 1\",\"pages\":\"2023-2025\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2013.6744869\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2013.6744869","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Feasibility study of homojunction CIGS solar cells
The potential for high conversion efficiency of the homojunction Cu(In, Ga)Se2 (CIGS) solar cells was examined by device simulations and experimental approaches. The simulation results showed that many electrons in n-CIGS layers could compensate to some extent for the existence of interface states at i-ZnO/n-CIGS interfaces in the homojunction structure. In the case of using the partial electrolyte treatments of CIGS films to produce the n-type doping, the concentrations of the Cd dopants in the n-CIGS layer were 1016 cm-2. The conversion efficiency of 17.2% for this homojunction CIGS solar cell was obtained.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
