Si3N4-SiC晶须复合材料的烧结

N. Tamari, I. Kondo, S. Sodeoka, K. Ueno, Y. Toibana
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引用次数: 1

摘要

在1MPa N2条件下,1700℃~ 2000℃加热60min,制备了Si3N4-SiC晶须复合材料,晶须含量达到30wt%。在2000℃下得到了致密的复合材料。当晶须含量为10%和20wt%时,助烧剂Y2O3 + La2O3的最佳含量分别为20%和30mol%。当晶须添加量为10%和20%时,室温弯曲强度分别为596和560MPa。此外,这些复合材料在1300℃时的强度超过室温值的80%。通过使用过筛晶须来提高强度。
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Sintering of Si3N4-SiC Whisker Composite
Si3N4-SiC whisker composites with whisker content up to 30wt% were prepared by heating 1700° to 2000°C for 60min in 1MPa N2. Fully dense composites were obtained at 2000°C. The optimum content of sintering aids, Y2O3 plus La2O3, was 20 and 30mol% for the whisker content of 10 and 20wt% respectively. The room temperature bending strength were 596 and 560MPa for 10 and 20wt% additions of whisker, respectively. Moreover, these composites had strengths more than 80% of the room temperature value at 1300°C. Improvement in the strength was achieved by using sieved whisker.
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