X. Huang, D. Gong, Q. Sun, C. Chen, D. Guo, S. Hou, G. Huang, S. Kulis, C. Liu, T. Liu, P. Moreira, A. S. Rodr'iguez, H. Sun, J. Troska, L. Xiao, L. Zhang, W. Zhang, J. Ye
{"title":"带有片上电荷泵的4通道10gbps /ch CMOS VCSEL阵列驱动器","authors":"X. Huang, D. Gong, Q. Sun, C. Chen, D. Guo, S. Hou, G. Huang, S. Kulis, C. Liu, T. Liu, P. Moreira, A. S. Rodr'iguez, H. Sun, J. Troska, L. Xiao, L. Zhang, W. Zhang, J. Ye","doi":"10.22323/1.370.0048","DOIUrl":null,"url":null,"abstract":"We present the design and test results of a 4-channel 10-Gbps/ch Vertical-Cavity Surface-Emitting Laser array driver, the cpVLAD. With on-chip charge-pumps to extend the biasing headroom for the VCSELs needed for low temperature operation and mitigation of the radiation effects. The cpVLAD was fabricated in a 65-nm CMOS technology. The test results show that the cpVLAD is capable of driving VCSELs with forward bias voltages as high as 2.8 V from a 2.5 V power supply. The power consumption of the cpVLAD is 94 mW/ch.","PeriodicalId":8827,"journal":{"name":"arXiv: Instrumentation and Detectors","volume":"99 31 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 4-Channel 10-Gbps/ch CMOS VCSEL Array Driver with on-chip Charge Pumps\",\"authors\":\"X. Huang, D. Gong, Q. Sun, C. Chen, D. Guo, S. Hou, G. Huang, S. Kulis, C. Liu, T. Liu, P. Moreira, A. S. Rodr'iguez, H. Sun, J. Troska, L. Xiao, L. Zhang, W. Zhang, J. Ye\",\"doi\":\"10.22323/1.370.0048\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the design and test results of a 4-channel 10-Gbps/ch Vertical-Cavity Surface-Emitting Laser array driver, the cpVLAD. With on-chip charge-pumps to extend the biasing headroom for the VCSELs needed for low temperature operation and mitigation of the radiation effects. The cpVLAD was fabricated in a 65-nm CMOS technology. The test results show that the cpVLAD is capable of driving VCSELs with forward bias voltages as high as 2.8 V from a 2.5 V power supply. The power consumption of the cpVLAD is 94 mW/ch.\",\"PeriodicalId\":8827,\"journal\":{\"name\":\"arXiv: Instrumentation and Detectors\",\"volume\":\"99 31 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"arXiv: Instrumentation and Detectors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.22323/1.370.0048\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv: Instrumentation and Detectors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.22323/1.370.0048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 4-Channel 10-Gbps/ch CMOS VCSEL Array Driver with on-chip Charge Pumps
We present the design and test results of a 4-channel 10-Gbps/ch Vertical-Cavity Surface-Emitting Laser array driver, the cpVLAD. With on-chip charge-pumps to extend the biasing headroom for the VCSELs needed for low temperature operation and mitigation of the radiation effects. The cpVLAD was fabricated in a 65-nm CMOS technology. The test results show that the cpVLAD is capable of driving VCSELs with forward bias voltages as high as 2.8 V from a 2.5 V power supply. The power consumption of the cpVLAD is 94 mW/ch.
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