蓝宝石上硅衬底上溅射锆钛酸铅薄膜的沉积

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI:10.1109/IMWS-AMP.2018.8457139

R. Benoit, Christopher Y. Cheng, R. Rudy, R. Polcawich, J. Pulskamp, D. Potrepka, B. Hanrahan, S. Trolier-McKinstry

{"title":"蓝宝石上硅衬底上溅射锆钛酸铅薄膜的沉积","authors":"R. Benoit, Christopher Y. Cheng, R. Rudy, R. Polcawich, J. Pulskamp, D. Potrepka, B. Hanrahan, S. Trolier-McKinstry","doi":"10.1109/IMWS-AMP.2018.8457139","DOIUrl":null,"url":null,"abstract":"Sputtered Pb(Zr<inf>52</inf>Ti<inf>48</inf>)O<inf>3</inf> (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO<inf>2</inf> wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.","PeriodicalId":6605,"journal":{"name":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"31 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates\",\"authors\":\"R. Benoit, Christopher Y. Cheng, R. Rudy, R. Polcawich, J. Pulskamp, D. Potrepka, B. Hanrahan, S. Trolier-McKinstry\",\"doi\":\"10.1109/IMWS-AMP.2018.8457139\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Sputtered Pb(Zr<inf>52</inf>Ti<inf>48</inf>)O<inf>3</inf> (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO<inf>2</inf> wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.\",\"PeriodicalId\":6605,\"journal\":{\"name\":\"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)\",\"volume\":\"31 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMWS-AMP.2018.8457139\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS-AMP.2018.8457139","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

用于射频MEMS应用的溅射Pb(Zr52Ti48)O3 (PZT)薄膜生长在150毫米的蓝宝石上硅(SOS)衬底上。薄膜性能与沉积在150mm Si/SiO2晶圆上的类似薄膜进行了比较。在SOS上沉积的PZT薄膜的PMAX (46.2 vs. 42.1 μV/cm2)和PREM (22.0 vs. 16.5 μV/cm2)均优于Si上沉积的薄膜。还注意到最大ϵr从1027 (Si)减少到927 (SOS)。晶体结构采用x射线衍射检测，铁电P-E迟滞曲线、介电常数调谐和损耗切线采用自制电容器结构研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates

Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm²) and PREM (22.0 vs. 16.5 μV/cm²) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

自引率

0.00%

发文量

期刊最新文献

3D Printing of Ka band Orthomode Transducers Polymer-based 3D Printed Millimeter-wave Components for Spacecraft Payloads Sub-Micron Gallium Oxide Radio Frequency Field-Effect Transistors Microwave-Driven CPW Microplasma Generator for Low-Power Discharge Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates