D. Shimura, F. Ichihashi, K. Nishitani, S. Harada, M. Kuwahara, T. Ito, M. Matsunami, S. Kimura, T. Sakai, M. Tagawa, T. Ujihara
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Ultrahigh-resolution direct observation of mini-bands formed in InGaAs/AlGaAs superlattice
Mini-bands formed in superlattice structures are often used for an intermediate-band solar cell. In order to design an optimized structure, it is important to measure the mini-band dispersions which influence transport properties and solar-energy conversion efficiency. In this study, we directly observed the dispersions of mini-bands formed in InGaAs/AlGaAs quantum-well superlattices by angle-resolved photoemission spectroscopy with synchrotron radiation light. The short-period energy dispersions due to the mini-bands around the X-valley were clearly obtained. In addition, the effective mass coefficient of each mini-band could be individually evaluated.
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