{"title":"硒化砷薄膜在低温下的光学性质","authors":"Maher Abdullah","doi":"10.33899/rjs.2023.178576","DOIUrl":null,"url":null,"abstract":"With the simultaneous thermal spraying of glassy arsenic selenide (As 2 Se 3 ), a significant influence of the introduced Indium (In) and Selenium (Se) on the films' structural and photovoltaic properties was established. The glassy As 2 Se 3 and In or Se were deposited simultaneously at up to 60 nm/s on cooled substrates at different temperatures ranging from 70 to -50 °C, layers with a thickness of 0.5 to 1 m in a vacuum 10-3 Pa. Films produced on low-temperature substrates result in structural modifications that can be utilized for lithography and electrically active defects. The energy necessary for the As 2 Se 3 annealing technique, according to the results, is equal to 0.57 eV of high-temperature energy. When Se is supplied at a temperature of -50 °C, we saw that the photocurrent increases at low temperatures. The image is minimally affected by Se increases greater than 7%. The solubility time of the non-irradiated segment is 5 seconds, the rest layer dissolves in 12 seconds, and the thickness of the rest layer is above 75%.","PeriodicalId":20803,"journal":{"name":"Rafidain journal of science","volume":"48 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modified Optical Properties of Arsenic Selenide Thin Film at Low Temperatures\",\"authors\":\"Maher Abdullah\",\"doi\":\"10.33899/rjs.2023.178576\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With the simultaneous thermal spraying of glassy arsenic selenide (As 2 Se 3 ), a significant influence of the introduced Indium (In) and Selenium (Se) on the films' structural and photovoltaic properties was established. The glassy As 2 Se 3 and In or Se were deposited simultaneously at up to 60 nm/s on cooled substrates at different temperatures ranging from 70 to -50 °C, layers with a thickness of 0.5 to 1 m in a vacuum 10-3 Pa. Films produced on low-temperature substrates result in structural modifications that can be utilized for lithography and electrically active defects. The energy necessary for the As 2 Se 3 annealing technique, according to the results, is equal to 0.57 eV of high-temperature energy. When Se is supplied at a temperature of -50 °C, we saw that the photocurrent increases at low temperatures. The image is minimally affected by Se increases greater than 7%. The solubility time of the non-irradiated segment is 5 seconds, the rest layer dissolves in 12 seconds, and the thickness of the rest layer is above 75%.\",\"PeriodicalId\":20803,\"journal\":{\"name\":\"Rafidain journal of science\",\"volume\":\"48 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Rafidain journal of science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.33899/rjs.2023.178576\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Rafidain journal of science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.33899/rjs.2023.178576","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
通过同时热喷涂玻璃化硒化砷(As 2 Se 3),确定了引入铟(In)和硒(Se)对薄膜结构和光伏性能的显著影响。在10-3 Pa的真空条件下,在70 ~ -50°C的不同温度下,以高达60 nm/s的速度同时沉积了As 2 Se 3和In或Se,层厚为0.5 ~ 1 m。在低温衬底上生产的薄膜导致结构修改,可用于光刻和电活性缺陷。结果表明,as2se3退火技术所需的能量为0.57 eV的高温能量。当Se在-50°C的温度下供电时,我们看到光电流在低温时增加。Se增加大于7%对图像影响最小。未辐照段溶解度时间为5秒,休息层溶解度为12秒,休息层厚度在75%以上。
Modified Optical Properties of Arsenic Selenide Thin Film at Low Temperatures
With the simultaneous thermal spraying of glassy arsenic selenide (As 2 Se 3 ), a significant influence of the introduced Indium (In) and Selenium (Se) on the films' structural and photovoltaic properties was established. The glassy As 2 Se 3 and In or Se were deposited simultaneously at up to 60 nm/s on cooled substrates at different temperatures ranging from 70 to -50 °C, layers with a thickness of 0.5 to 1 m in a vacuum 10-3 Pa. Films produced on low-temperature substrates result in structural modifications that can be utilized for lithography and electrically active defects. The energy necessary for the As 2 Se 3 annealing technique, according to the results, is equal to 0.57 eV of high-temperature energy. When Se is supplied at a temperature of -50 °C, we saw that the photocurrent increases at low temperatures. The image is minimally affected by Se increases greater than 7%. The solubility time of the non-irradiated segment is 5 seconds, the rest layer dissolves in 12 seconds, and the thickness of the rest layer is above 75%.