Z. Jian, Yu Yuanwei, Lu Le, Cheng Chen, Zhang Yong, Yang Naibin
{"title":"用于MEMS移相器应用的3端口MEMS开关","authors":"Z. Jian, Yu Yuanwei, Lu Le, Cheng Chen, Zhang Yong, Yang Naibin","doi":"10.1109/NEMS.2006.334856","DOIUrl":null,"url":null,"abstract":"A 3-port MEMS switch for MEMS phase shifter is present, with bias electrodes physically insulated from RF/microwave transmission line, which are designed for lower crosstalk between bias and microwave signal. The RF/microwave performances of these switches are optimized by 2.5 dimension electromagnetic (EM) field-solvers of ADS/Momentum. The mechanical structure of the switch is optimized by electromechanical coupling analysis of Intellisuitereg software. The insert loss of the switch is 0.66dB@10GHz and the isolation is 23.26dB@10GHz. The delay of on-state is about 50mus (90% bias) and that of off-state is about 15mus (10% bias). The whole chip size of the switch is 800mum*1000mum which made the MEMS phase shifter much more compact","PeriodicalId":6362,"journal":{"name":"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"8 1","pages":"611-614"},"PeriodicalIF":0.0000,"publicationDate":"2006-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 3-port MEMS switch for MEMS phase shifter application\",\"authors\":\"Z. Jian, Yu Yuanwei, Lu Le, Cheng Chen, Zhang Yong, Yang Naibin\",\"doi\":\"10.1109/NEMS.2006.334856\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 3-port MEMS switch for MEMS phase shifter is present, with bias electrodes physically insulated from RF/microwave transmission line, which are designed for lower crosstalk between bias and microwave signal. The RF/microwave performances of these switches are optimized by 2.5 dimension electromagnetic (EM) field-solvers of ADS/Momentum. The mechanical structure of the switch is optimized by electromechanical coupling analysis of Intellisuitereg software. The insert loss of the switch is 0.66dB@10GHz and the isolation is 23.26dB@10GHz. The delay of on-state is about 50mus (90% bias) and that of off-state is about 15mus (10% bias). The whole chip size of the switch is 800mum*1000mum which made the MEMS phase shifter much more compact\",\"PeriodicalId\":6362,\"journal\":{\"name\":\"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems\",\"volume\":\"8 1\",\"pages\":\"611-614\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEMS.2006.334856\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2006.334856","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 3-port MEMS switch for MEMS phase shifter application
A 3-port MEMS switch for MEMS phase shifter is present, with bias electrodes physically insulated from RF/microwave transmission line, which are designed for lower crosstalk between bias and microwave signal. The RF/microwave performances of these switches are optimized by 2.5 dimension electromagnetic (EM) field-solvers of ADS/Momentum. The mechanical structure of the switch is optimized by electromechanical coupling analysis of Intellisuitereg software. The insert loss of the switch is 0.66dB@10GHz and the isolation is 23.26dB@10GHz. The delay of on-state is about 50mus (90% bias) and that of off-state is about 15mus (10% bias). The whole chip size of the switch is 800mum*1000mum which made the MEMS phase shifter much more compact