分体结构SAR ADC的寄生电容效应校准方案

Yujia Huang, Qiao Meng, Fei Li, Jianwei Zhang
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引用次数: 0

摘要

提出了一种基于冗余桥式电容的分体式SAR ADC寄生电容标定方案。采用数字控制补偿电容阵列对寄生电容进行标定。通过对msb侧最后位电容和lsb侧所有电容的比较,采用校准电容阵列来补偿寄生电容造成的权值误差。与其它同类标定技术相比,该标定方案适用于顶板采样结构。原型采用40nm CMOS技术实现,核心面积为350um*250um。校准后,在奈奎斯特速率输入,采样率为160MS/s,在1.1V电源电压下消耗的核心功率为2.1mW时,实现了68.85dB的SNDR和83.11dB的SFDR。
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The Parasitic Capacitance Effect Calibration Scheme of The Split Structure SAR ADC
In this paper, a parasitic capacitance calibration scheme of split structure SAR ADC based on redundant bridged capacitor is proposed. A digitally controlled compensation capacitor array is used for parasitic capacitor calibration. By the comparison of the MSB-side last-bit capacitor and all the capacitors in LSB-side, the calibration capacitor array is employed to compensate the weight error caused by the parasitic capacitor. Compared with other similar calibration techniques, this calibration scheme is suitable for top-plate sampling architecture. The prototype is implemented in 40nm CMOS technology, the core area is 350um*250um. After calibration, an SNDR of 68.85dB and an SFDR of 83.11dB are achieved with the with the Nyquist rate input at a sampling rate of 160MS/s, consuming the core power of 2.1mW at 1.1V supply voltage.
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