{"title":"薄膜表面的平滑","authors":"A. Panin, A. Shugurov","doi":"10.1109/KORUS.2000.866086","DOIUrl":null,"url":null,"abstract":"Surface morphologies of thin dielectric films are studied with atomic force microscopy. It is shown that the deposition temperature greatly affects the structure and the surface roughness of the films. Films deposited at room temperature are found to be amorphous and smooth. Films grown at 200/spl deg/C are amorphous, but also contain single inclusions of crystallites. Finally, fine grain films with quasiperiodic wave-like surface topography are grown at 300-500/spl deg/C. The introduction of S and Se atoms is observed to suppress 3D island growth and to decrease the surface roughness of the films. Both root-mean-square roughness and fractal dimension are proposed to characterize film surfaces.","PeriodicalId":20531,"journal":{"name":"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology","volume":"57 1","pages":"209-214 vol. 3"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Smoothening of thin film surfaces\",\"authors\":\"A. Panin, A. Shugurov\",\"doi\":\"10.1109/KORUS.2000.866086\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Surface morphologies of thin dielectric films are studied with atomic force microscopy. It is shown that the deposition temperature greatly affects the structure and the surface roughness of the films. Films deposited at room temperature are found to be amorphous and smooth. Films grown at 200/spl deg/C are amorphous, but also contain single inclusions of crystallites. Finally, fine grain films with quasiperiodic wave-like surface topography are grown at 300-500/spl deg/C. The introduction of S and Se atoms is observed to suppress 3D island growth and to decrease the surface roughness of the films. Both root-mean-square roughness and fractal dimension are proposed to characterize film surfaces.\",\"PeriodicalId\":20531,\"journal\":{\"name\":\"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology\",\"volume\":\"57 1\",\"pages\":\"209-214 vol. 3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/KORUS.2000.866086\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/KORUS.2000.866086","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Surface morphologies of thin dielectric films are studied with atomic force microscopy. It is shown that the deposition temperature greatly affects the structure and the surface roughness of the films. Films deposited at room temperature are found to be amorphous and smooth. Films grown at 200/spl deg/C are amorphous, but also contain single inclusions of crystallites. Finally, fine grain films with quasiperiodic wave-like surface topography are grown at 300-500/spl deg/C. The introduction of S and Se atoms is observed to suppress 3D island growth and to decrease the surface roughness of the films. Both root-mean-square roughness and fractal dimension are proposed to characterize film surfaces.