{"title":"薄膜表面的平滑","authors":"A. Panin, A. Shugurov","doi":"10.1109/KORUS.2000.866086","DOIUrl":null,"url":null,"abstract":"Surface morphologies of thin dielectric films are studied with atomic force microscopy. It is shown that the deposition temperature greatly affects the structure and the surface roughness of the films. Films deposited at room temperature are found to be amorphous and smooth. Films grown at 200/spl deg/C are amorphous, but also contain single inclusions of crystallites. Finally, fine grain films with quasiperiodic wave-like surface topography are grown at 300-500/spl deg/C. The introduction of S and Se atoms is observed to suppress 3D island growth and to decrease the surface roughness of the films. Both root-mean-square roughness and fractal dimension are proposed to characterize film surfaces.","PeriodicalId":20531,"journal":{"name":"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Smoothening of thin film surfaces\",\"authors\":\"A. Panin, A. Shugurov\",\"doi\":\"10.1109/KORUS.2000.866086\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Surface morphologies of thin dielectric films are studied with atomic force microscopy. It is shown that the deposition temperature greatly affects the structure and the surface roughness of the films. Films deposited at room temperature are found to be amorphous and smooth. Films grown at 200/spl deg/C are amorphous, but also contain single inclusions of crystallites. Finally, fine grain films with quasiperiodic wave-like surface topography are grown at 300-500/spl deg/C. The introduction of S and Se atoms is observed to suppress 3D island growth and to decrease the surface roughness of the films. Both root-mean-square roughness and fractal dimension are proposed to characterize film surfaces.\",\"PeriodicalId\":20531,\"journal\":{\"name\":\"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/KORUS.2000.866086\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings KORUS 2000. The 4th Korea-Russia International Symposium On Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/KORUS.2000.866086","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

用原子力显微镜研究了介质薄膜的表面形貌。结果表明,沉积温度对薄膜的结构和表面粗糙度有较大影响。在室温下沉积的薄膜是无定形的和光滑的。在200℃下生长的薄膜是无定形的,但也含有单晶包裹体。最后,在300-500/spl度/C的温度下生长出具有准周期波状表面形貌的细晶粒薄膜。S和Se原子的引入抑制了三维岛生长,降低了薄膜的表面粗糙度。提出了均方根粗糙度和分形维数来表征薄膜表面。
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Smoothening of thin film surfaces
Surface morphologies of thin dielectric films are studied with atomic force microscopy. It is shown that the deposition temperature greatly affects the structure and the surface roughness of the films. Films deposited at room temperature are found to be amorphous and smooth. Films grown at 200/spl deg/C are amorphous, but also contain single inclusions of crystallites. Finally, fine grain films with quasiperiodic wave-like surface topography are grown at 300-500/spl deg/C. The introduction of S and Se atoms is observed to suppress 3D island growth and to decrease the surface roughness of the films. Both root-mean-square roughness and fractal dimension are proposed to characterize film surfaces.
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