H. Nakata, A. Yokoyama, T. Hatou, T. Ohyama, N. Tsubouchi, S. Pavlov, H. W. Heubers
{"title":"Si:P太赫兹激光的激发光谱与Ge:Te中的红外光导","authors":"H. Nakata, A. Yokoyama, T. Hatou, T. Ohyama, N. Tsubouchi, S. Pavlov, H. W. Heubers","doi":"10.1109/ICIMW.2004.1422186","DOIUrl":null,"url":null,"abstract":"We observed infrared photoconductivity in Ge:Te and THz laser emission from Si:P excited by a free electron laser (FEL) or CO/sub 2/ lasers. The emission intensity decreases with increasing photon energy of the FEL in the range of about 120 meV. Photoconductivity spectra of Ge:Te has LO phonon structures.","PeriodicalId":13627,"journal":{"name":"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2004-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Excitation spectroscopy of Si:P THz laser and infrared photoconductivity in Ge:Te\",\"authors\":\"H. Nakata, A. Yokoyama, T. Hatou, T. Ohyama, N. Tsubouchi, S. Pavlov, H. W. Heubers\",\"doi\":\"10.1109/ICIMW.2004.1422186\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We observed infrared photoconductivity in Ge:Te and THz laser emission from Si:P excited by a free electron laser (FEL) or CO/sub 2/ lasers. The emission intensity decreases with increasing photon energy of the FEL in the range of about 120 meV. Photoconductivity spectra of Ge:Te has LO phonon structures.\",\"PeriodicalId\":13627,\"journal\":{\"name\":\"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIMW.2004.1422186\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIMW.2004.1422186","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Excitation spectroscopy of Si:P THz laser and infrared photoconductivity in Ge:Te
We observed infrared photoconductivity in Ge:Te and THz laser emission from Si:P excited by a free electron laser (FEL) or CO/sub 2/ lasers. The emission intensity decreases with increasing photon energy of the FEL in the range of about 120 meV. Photoconductivity spectra of Ge:Te has LO phonon structures.
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