{"title":"用于MKID阵列读出的0.4-1.2 GHz SiGe低温LNA","authors":"Mohsen Hosseini, Wei-Ting Wong, J. Bardin","doi":"10.1109/mwsym.2019.8701100","DOIUrl":null,"url":null,"abstract":"The design and characterization of a low noise amplifier optimized for the readout of microwave kinetic inductance detectors is described. The work is first motivated through a description of microwave kinetic inductance detectors and a discussion of the requirements for the low-noise amplifiers employed for readout of these devices. Next, the design of a two-stage silicon germanium cryogenic integrated circuit low noise amplifier is presented. The small-signal and large-signal characteristics of the fabricated amplifier are then measured. It is shown that, at a physical temperature of 16 K, the amplifier achieves a gain of greater than 30 dB and an average noise temperature of 3.3 K over the 0.4–1.2 GHz frequency band while dissipating less than 7 mW. Moreover, the wideband compression characteristics are measured it is found that the linearity of the amplifier is sufficient to support frequency domain multiplexed readout of more than 500 detectors.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"42 1","pages":"164-167"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A 0.4–1.2 GHz SiGe Cryogenic LNA for Readout of MKID Arrays\",\"authors\":\"Mohsen Hosseini, Wei-Ting Wong, J. Bardin\",\"doi\":\"10.1109/mwsym.2019.8701100\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and characterization of a low noise amplifier optimized for the readout of microwave kinetic inductance detectors is described. The work is first motivated through a description of microwave kinetic inductance detectors and a discussion of the requirements for the low-noise amplifiers employed for readout of these devices. Next, the design of a two-stage silicon germanium cryogenic integrated circuit low noise amplifier is presented. The small-signal and large-signal characteristics of the fabricated amplifier are then measured. It is shown that, at a physical temperature of 16 K, the amplifier achieves a gain of greater than 30 dB and an average noise temperature of 3.3 K over the 0.4–1.2 GHz frequency band while dissipating less than 7 mW. Moreover, the wideband compression characteristics are measured it is found that the linearity of the amplifier is sufficient to support frequency domain multiplexed readout of more than 500 detectors.\",\"PeriodicalId\":6720,\"journal\":{\"name\":\"2019 IEEE MTT-S International Microwave Symposium (IMS)\",\"volume\":\"42 1\",\"pages\":\"164-167\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE MTT-S International Microwave Symposium (IMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/mwsym.2019.8701100\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/mwsym.2019.8701100","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.4–1.2 GHz SiGe Cryogenic LNA for Readout of MKID Arrays
The design and characterization of a low noise amplifier optimized for the readout of microwave kinetic inductance detectors is described. The work is first motivated through a description of microwave kinetic inductance detectors and a discussion of the requirements for the low-noise amplifiers employed for readout of these devices. Next, the design of a two-stage silicon germanium cryogenic integrated circuit low noise amplifier is presented. The small-signal and large-signal characteristics of the fabricated amplifier are then measured. It is shown that, at a physical temperature of 16 K, the amplifier achieves a gain of greater than 30 dB and an average noise temperature of 3.3 K over the 0.4–1.2 GHz frequency band while dissipating less than 7 mW. Moreover, the wideband compression characteristics are measured it is found that the linearity of the amplifier is sufficient to support frequency domain multiplexed readout of more than 500 detectors.
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