M. Ćwikliński, P. Bruckner, S. Leone, C. Friesicke, R. Lozar, H. Mabler, R. Quay, O. Ambacher
{"title":"带宽为40GHz的190 ghz g波段GaN放大器mmic","authors":"M. Ćwikliński, P. Bruckner, S. Leone, C. Friesicke, R. Lozar, H. Mabler, R. Quay, O. Ambacher","doi":"10.1109/mwsym.2019.8700762","DOIUrl":null,"url":null,"abstract":"We report on three state-of-the-art G-band (140–220GHz) GaN amplifier MMICs. A 4-stage common-source amplifier can provide a small-signal gain of 10dB at 190 GHz with a 3-dB bandwidth of 40GHz (156–196 GHz). A 5-stage common-source MMIC achieves up to 12dB gain at 190GHz with a 36-GHz (157–193 GHz) bandwidth. Additionally, a 2-stage amplifier using inductive degeneration shows 6.3 dB of gain at 179 GHz with a bandwidth of 12GHz (172–184 GHz). At 190 GHz, the 5-stage amplifier can deliver 14.1 dBm (279 mW/mm) of output power at the 1.8-dB gain-compression point with a corresponding power-added efficiency of 1.2%. To the best of our knowledge, these amplifiers show the highest gain above 170GHz among any reported GaN-based MMICs. This is also the first demonstration of multi-stage GaN circuits that can provide gain up to the 200-GHz mark.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"130 1","pages":"1257-1260"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"190-GHz G-Band GaN Amplifier MMICs with 40GHz of Bandwidth\",\"authors\":\"M. Ćwikliński, P. Bruckner, S. Leone, C. Friesicke, R. Lozar, H. Mabler, R. Quay, O. Ambacher\",\"doi\":\"10.1109/mwsym.2019.8700762\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on three state-of-the-art G-band (140–220GHz) GaN amplifier MMICs. A 4-stage common-source amplifier can provide a small-signal gain of 10dB at 190 GHz with a 3-dB bandwidth of 40GHz (156–196 GHz). A 5-stage common-source MMIC achieves up to 12dB gain at 190GHz with a 36-GHz (157–193 GHz) bandwidth. Additionally, a 2-stage amplifier using inductive degeneration shows 6.3 dB of gain at 179 GHz with a bandwidth of 12GHz (172–184 GHz). At 190 GHz, the 5-stage amplifier can deliver 14.1 dBm (279 mW/mm) of output power at the 1.8-dB gain-compression point with a corresponding power-added efficiency of 1.2%. To the best of our knowledge, these amplifiers show the highest gain above 170GHz among any reported GaN-based MMICs. This is also the first demonstration of multi-stage GaN circuits that can provide gain up to the 200-GHz mark.\",\"PeriodicalId\":6720,\"journal\":{\"name\":\"2019 IEEE MTT-S International Microwave Symposium (IMS)\",\"volume\":\"130 1\",\"pages\":\"1257-1260\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE MTT-S International Microwave Symposium (IMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/mwsym.2019.8700762\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/mwsym.2019.8700762","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
190-GHz G-Band GaN Amplifier MMICs with 40GHz of Bandwidth
We report on three state-of-the-art G-band (140–220GHz) GaN amplifier MMICs. A 4-stage common-source amplifier can provide a small-signal gain of 10dB at 190 GHz with a 3-dB bandwidth of 40GHz (156–196 GHz). A 5-stage common-source MMIC achieves up to 12dB gain at 190GHz with a 36-GHz (157–193 GHz) bandwidth. Additionally, a 2-stage amplifier using inductive degeneration shows 6.3 dB of gain at 179 GHz with a bandwidth of 12GHz (172–184 GHz). At 190 GHz, the 5-stage amplifier can deliver 14.1 dBm (279 mW/mm) of output power at the 1.8-dB gain-compression point with a corresponding power-added efficiency of 1.2%. To the best of our knowledge, these amplifiers show the highest gain above 170GHz among any reported GaN-based MMICs. This is also the first demonstration of multi-stage GaN circuits that can provide gain up to the 200-GHz mark.