钴兼容的清洁解决方案，14纳米及以上

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI:10.1109/IITC-MAM.2015.7325635

K. Courouble, L. Broussous, S. Zoll, K. Haxaire, M. Mellier, G. Druais

{"title":"钴兼容的清洁解决方案，14纳米及以上","authors":"K. Courouble, L. Broussous, S. Zoll, K. Haxaire, M. Mellier, G. Druais","doi":"10.1109/IITC-MAM.2015.7325635","DOIUrl":null,"url":null,"abstract":"In this paper, wet cleaning solution compatible with cobalt are investigated to achieve low Co etching rate on blankets film and no film attack on patterned 14nm wafer after line and via etching. Proposed solutions are compared to conventional wet cleaning solutions.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"397 1","pages":"119-122"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Cobalt compatible cleaning solutions for 14nm and beyond\",\"authors\":\"K. Courouble, L. Broussous, S. Zoll, K. Haxaire, M. Mellier, G. Druais\",\"doi\":\"10.1109/IITC-MAM.2015.7325635\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, wet cleaning solution compatible with cobalt are investigated to achieve low Co etching rate on blankets film and no film attack on patterned 14nm wafer after line and via etching. Proposed solutions are compared to conventional wet cleaning solutions.\",\"PeriodicalId\":6514,\"journal\":{\"name\":\"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)\",\"volume\":\"397 1\",\"pages\":\"119-122\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC-MAM.2015.7325635\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC-MAM.2015.7325635","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文研究了一种与钴相容的湿清洗溶液，以实现低Co在毯膜上的蚀刻率，并且在蚀刻后和蚀刻过程中对14nm图案化晶圆无膜侵蚀。提出的解决方案与传统的湿式清洗方案进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Cobalt compatible cleaning solutions for 14nm and beyond

In this paper, wet cleaning solution compatible with cobalt are investigated to achieve low Co etching rate on blankets film and no film attack on patterned 14nm wafer after line and via etching. Proposed solutions are compared to conventional wet cleaning solutions.

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2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

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