超高真空条件下A3 iib2v半导体(Cd3As2, Zn3As2, Cd3P2, Zn3P2)的表面制备

{"title":"超高真空条件下A3 iib2v半导体(Cd3As2, Zn3As2, Cd3P2, Zn3P2)的表面制备","authors":"A. Hupfer, S. Schulze, D. Hirsch, L. Żdanowicz","doi":"10.1515/9783112485620-010","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":17719,"journal":{"name":"July 2019","volume":"24 1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1987-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Surface Preparation of A3\\n IIB2\\n V Semiconductors (Cd3As2, Zn3As2, Cd3P2, Zn3P2) under Ultra-High Vacuum Conditions\",\"authors\":\"A. Hupfer, S. Schulze, D. Hirsch, L. Żdanowicz\",\"doi\":\"10.1515/9783112485620-010\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":17719,\"journal\":{\"name\":\"July 2019\",\"volume\":\"24 1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"July 2019\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1515/9783112485620-010\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"July 2019","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1515/9783112485620-010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}