集成太赫兹源的制造

Twenty Seventh International Conference on Infrared and Millimeter Waves Pub Date : 2002-12-16 DOI:10.1109/ICIMW.2002.1076117

G. S. Schoenthal, W. Bishop, Haiyong Xu, J. Hesler, R. Weikle, T. Crowe

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引用次数: 6

摘要

讨论了在200 GHz和600 GHz工作的集成、石英上砷化镓、肖特基边带发生器和乘频器的制造方法。重要的属性包括亚微米阳极、气桥肖特基触点、外延层键合、低温(<200/spl℃)加工和准欧姆触点。给出了完成电路的照片和测试结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fabrication of integrated THz sources

Fabrication methods for integrated, GaAs-on-Quartz, Schottky based sideband generators and frequency multipliers operating at 200 GHz and 600 GHz are discussed. Important attributes include sub-micron anodes, air-bridged Schottky contacts, epitaxial layer bonding, low temperature (<200/spl deg/C) processing, and quasi-ohmic contacts. Photos of completed circuits and test results are presented.

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Twenty Seventh International Conference on Infrared and Millimeter Waves

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