用于高级互连的直接蚀刻Cu表征

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI:10.1109/IITC-MAM.2015.7325613

L. Wen, F. Yamashita, B. Tang, K. Croes, S. Tahara, Keiichi Shimoda, Takeru Maeshiro, E. Nishimura, F. Lazzarino, I. Ciofi, J. Bommels, Z. Tokei

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引用次数: 6

摘要

在300mm晶圆水平上研究了直接蚀刻方法的铜线图案。获得了锥度约为74.5°的横截面侧壁轮廓，中线宽度为44 nm，为进一步扩展该技术铺平了道路。与传统的铜腐蚀工艺相比，其电阻率更低，相邻铜线之间的漏电流更小。原位沉积10nm的SiN帽作为钝化，以进行电气和可靠性测试。电迁移(EM)表征表明，直接蚀刻铜线具有良好的可靠性。

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Direct etched Cu characterization for advanced interconnects

Cu wires patterning by direct etch methods is investigated at 300mm wafer level. Cross-sectional sidewall profiles with tapering angles around 74.5° are obtained with a mid-line width of 44 nm, which paves the way to further scaling of this technique. Lower resistivity is demonstrated with respect to conventional Cu damascene process, with low leakage current between adjacent Cu lines. An in-situ 10nm SiN cap is deposited as a passivation to enable electrical and reliability tests. The electromigration (EM) characterization shows promising reliability performance of the direct etched Cu wires.

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2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

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