A. Inoue, S. Goto, T. Kunii, T. Ishikawa, Y. Matsuda
{"title":"一种高效率、高电压、平衡级联场效应管","authors":"A. Inoue, S. Goto, T. Kunii, T. Ishikawa, Y. Matsuda","doi":"10.1109/MWSYM.2005.1516694","DOIUrl":null,"url":null,"abstract":"A high efficiency, high operating voltage GaAs HFET is presented. A balanced cascode circuit without RF feedback, which achieves the high PAE of 78.2% at 2.1GHz, is proposed. The optimization of a balance capacitor is analyzed theoretically and proved experimentally. This result contributes to the design of high voltage power amplifiers with low breakdown voltage transistors.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A high efficiency, high voltage, balanced cascode FET\",\"authors\":\"A. Inoue, S. Goto, T. Kunii, T. Ishikawa, Y. Matsuda\",\"doi\":\"10.1109/MWSYM.2005.1516694\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high efficiency, high operating voltage GaAs HFET is presented. A balanced cascode circuit without RF feedback, which achieves the high PAE of 78.2% at 2.1GHz, is proposed. The optimization of a balance capacitor is analyzed theoretically and proved experimentally. This result contributes to the design of high voltage power amplifiers with low breakdown voltage transistors.\",\"PeriodicalId\":13133,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2005.1516694\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2005.1516694","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high efficiency, high voltage, balanced cascode FET
A high efficiency, high operating voltage GaAs HFET is presented. A balanced cascode circuit without RF feedback, which achieves the high PAE of 78.2% at 2.1GHz, is proposed. The optimization of a balance capacitor is analyzed theoretically and proved experimentally. This result contributes to the design of high voltage power amplifiers with low breakdown voltage transistors.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
