A. Khaldi, Y. Benallou, M. Zemouli, K. Amara, M. E. Keurti
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引用次数: 1
摘要
本文采用基于第一性原理的密度泛函理论,在WIEN2K代码中实现了全势线性化增广平面波方法,研究了TaCoSn、TaIrSn和TaRhSn的结构、弹性、电子和热电性能。利用Perdew-Burke-Ernzerhof (GGA-PBEsol)提出的广义梯度势计算结构常数和弹性常数。通过GGA-PBEsol和TranBlaha修饰的Becke-Johnson (TB-mBJ)电位对电子结构进行了修饰。我们的结果表明,所研究的化合物是具有间接间隙的半导体。另一方面,我们研究了不同温度下的热电性质与化学势的关系。结果表明,与n型掺杂相比,p型掺杂的热电性能因素更为重要,这些因素的最大值表示最佳空穴掺杂水平,从而使材料具有较高的热电性能。最后,我们发现在300、600和900 K的温度下,TaRhSn化合物的最佳热功率值分别为(75.76、175.60和238.92)1014W cm - 1 K - 2 s - 1。
First Principle Study and Optimal Doping for High Thermoelectric Performance of TaXSn Materials (X = Co, Ir and Rh)
In this paper, the full potential linearized augmented plane wave method implemented in the WIEN2K code with first principles-based density functional theory are used to investigate the structural, elastic, electronic and thermoelectric properties of TaCoSn, TaIrSn and TaRhSn. The structural and elastic constants are calculated using the generalized gradient potential developed by Perdew-Burke-Ernzerhof (GGA-PBEsol). The electronic structures are performed by means of GGA-PBEsol and improved by TranBlaha modified Becke-Johnson (TB-mBJ) potential. Our results show that the studied compounds are semiconductors with indirect gaps. On the other hand, we investigated the thermoelectric properties at different temperatures with respect to the chemical potential. The results show that the thermopower factors are more important for p-type doping than those for n-type doping and the maximum value of these factors indicates the optimal hole-doping level which gives rise to high thermoelectric performances of these materials. Finally, we note that the best thermopower values are found for the TaRhSn compound with optimal doping levels of (75.76, 175.60 and 238.92) 1014 W cm – 1 K – 2 s – 1 at temperatures of 300, 600, and 900 K, respectively.