多组分(高熵)薄膜材料的熵度与性能的关系

L. Odnodvorets, I. Protsenko, Yu. M. Shabelnyk, N. I. Shumakova
{"title":"多组分(高熵)薄膜材料的熵度与性能的关系","authors":"L. Odnodvorets, I. Protsenko, Yu. M. Shabelnyk, N. I. Shumakova","doi":"10.21272/jnep.12(2).02014","DOIUrl":null,"url":null,"abstract":"A correlation between the degree of entropy and the electrophysical and magnetoresistive properties of film materials with different architecture in the paper establishes. It is established that the gradual decrease in thermal coefficient of resistance (TCR) during the transition from low-entropy (LEA) to high-entropy (HEA) alloys is explained by the fact that the resistivity in the direction of LEA  HEA increases as a result of the decrease of the atoms mobility during the formation of basic phase and solid phase. It is shown that the temperature sensitivity of the resistance almost does not change depending on the entropy degree. The magnetic field dependences in all three measurement geometries differs only in amplitude and has all the GMR characteristics. It is concluded that the elements of granular state are realized in HEA films. At the same time, anisotropic magnetoresistance is observed for all cases of film material architecture under certain conditions which is caused not by spin-dependent electron scattering but by spin-orbital electron interaction, that is, the architecture of the samples does not play a prominent role.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"229 1","pages":"02014-1-02014-3"},"PeriodicalIF":0.0000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Correlation Between the Entropy Degree and Properties of Multi-component (High-entropy) Film Materials\",\"authors\":\"L. Odnodvorets, I. Protsenko, Yu. M. Shabelnyk, N. I. Shumakova\",\"doi\":\"10.21272/jnep.12(2).02014\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A correlation between the degree of entropy and the electrophysical and magnetoresistive properties of film materials with different architecture in the paper establishes. It is established that the gradual decrease in thermal coefficient of resistance (TCR) during the transition from low-entropy (LEA) to high-entropy (HEA) alloys is explained by the fact that the resistivity in the direction of LEA  HEA increases as a result of the decrease of the atoms mobility during the formation of basic phase and solid phase. It is shown that the temperature sensitivity of the resistance almost does not change depending on the entropy degree. The magnetic field dependences in all three measurement geometries differs only in amplitude and has all the GMR characteristics. It is concluded that the elements of granular state are realized in HEA films. At the same time, anisotropic magnetoresistance is observed for all cases of film material architecture under certain conditions which is caused not by spin-dependent electron scattering but by spin-orbital electron interaction, that is, the architecture of the samples does not play a prominent role.\",\"PeriodicalId\":16514,\"journal\":{\"name\":\"Journal of Nano- and Electronic Physics\",\"volume\":\"229 1\",\"pages\":\"02014-1-02014-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Nano- and Electronic Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.21272/jnep.12(2).02014\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Nano- and Electronic Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21272/jnep.12(2).02014","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

建立了不同结构薄膜材料的熵度与电物理和磁阻性能之间的关系。在低熵(LEA)合金向高熵(HEA)合金转变过程中,热阻系数(TCR)逐渐减小的原因是:在基相和固相形成过程中,原子迁移率降低,导致LEA方向的电阻率升高HEA方向的电阻率升高。结果表明,电阻的温度灵敏度几乎不随熵值的变化而变化。磁场依赖于所有三种测量几何只在振幅不同,并具有所有的GMR特性。结果表明,HEA薄膜中实现了颗粒态元素。同时,在一定条件下,薄膜材料结构的各向异性磁阻不是由依赖自旋的电子散射引起的,而是由自旋轨道电子相互作用引起的,即样品的结构不起突出作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Correlation Between the Entropy Degree and Properties of Multi-component (High-entropy) Film Materials
A correlation between the degree of entropy and the electrophysical and magnetoresistive properties of film materials with different architecture in the paper establishes. It is established that the gradual decrease in thermal coefficient of resistance (TCR) during the transition from low-entropy (LEA) to high-entropy (HEA) alloys is explained by the fact that the resistivity in the direction of LEA  HEA increases as a result of the decrease of the atoms mobility during the formation of basic phase and solid phase. It is shown that the temperature sensitivity of the resistance almost does not change depending on the entropy degree. The magnetic field dependences in all three measurement geometries differs only in amplitude and has all the GMR characteristics. It is concluded that the elements of granular state are realized in HEA films. At the same time, anisotropic magnetoresistance is observed for all cases of film material architecture under certain conditions which is caused not by spin-dependent electron scattering but by spin-orbital electron interaction, that is, the architecture of the samples does not play a prominent role.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Development of Epoxy-polyester Nanocomposite Materials with Improved Physical and Mechanical Properties for Increasing Transport Vehicle Reliability Influence of Tunable Work Function on SOI-based DMG Multi-channel Junctionless Thin Film Transistor Theoretical Study of Photo-Luminescence Emission Using the Line Shape Function for Semiconductor Quantum Dots First Principle Study and Optimal Doping for High Thermoelectric Performance of TaXSn Materials (X = Co, Ir and Rh) Chemical Approach Based ZnS-ZnO Nanocomposite Synthesis and Assessment of their Structural, Morphological and Photocatalytic Properties
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1