L. Odnodvorets, I. Protsenko, Yu. M. Shabelnyk, N. I. Shumakova
{"title":"多组分(高熵)薄膜材料的熵度与性能的关系","authors":"L. Odnodvorets, I. Protsenko, Yu. M. Shabelnyk, N. I. Shumakova","doi":"10.21272/jnep.12(2).02014","DOIUrl":null,"url":null,"abstract":"A correlation between the degree of entropy and the electrophysical and magnetoresistive properties of film materials with different architecture in the paper establishes. It is established that the gradual decrease in thermal coefficient of resistance (TCR) during the transition from low-entropy (LEA) to high-entropy (HEA) alloys is explained by the fact that the resistivity in the direction of LEA HEA increases as a result of the decrease of the atoms mobility during the formation of basic phase and solid phase. It is shown that the temperature sensitivity of the resistance almost does not change depending on the entropy degree. The magnetic field dependences in all three measurement geometries differs only in amplitude and has all the GMR characteristics. It is concluded that the elements of granular state are realized in HEA films. At the same time, anisotropic magnetoresistance is observed for all cases of film material architecture under certain conditions which is caused not by spin-dependent electron scattering but by spin-orbital electron interaction, that is, the architecture of the samples does not play a prominent role.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"229 1","pages":"02014-1-02014-3"},"PeriodicalIF":0.0000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Correlation Between the Entropy Degree and Properties of Multi-component (High-entropy) Film Materials\",\"authors\":\"L. Odnodvorets, I. Protsenko, Yu. M. Shabelnyk, N. I. Shumakova\",\"doi\":\"10.21272/jnep.12(2).02014\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A correlation between the degree of entropy and the electrophysical and magnetoresistive properties of film materials with different architecture in the paper establishes. It is established that the gradual decrease in thermal coefficient of resistance (TCR) during the transition from low-entropy (LEA) to high-entropy (HEA) alloys is explained by the fact that the resistivity in the direction of LEA HEA increases as a result of the decrease of the atoms mobility during the formation of basic phase and solid phase. It is shown that the temperature sensitivity of the resistance almost does not change depending on the entropy degree. The magnetic field dependences in all three measurement geometries differs only in amplitude and has all the GMR characteristics. It is concluded that the elements of granular state are realized in HEA films. At the same time, anisotropic magnetoresistance is observed for all cases of film material architecture under certain conditions which is caused not by spin-dependent electron scattering but by spin-orbital electron interaction, that is, the architecture of the samples does not play a prominent role.\",\"PeriodicalId\":16514,\"journal\":{\"name\":\"Journal of Nano- and Electronic Physics\",\"volume\":\"229 1\",\"pages\":\"02014-1-02014-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Nano- and Electronic Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.21272/jnep.12(2).02014\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Nano- and Electronic Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21272/jnep.12(2).02014","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Correlation Between the Entropy Degree and Properties of Multi-component (High-entropy) Film Materials
A correlation between the degree of entropy and the electrophysical and magnetoresistive properties of film materials with different architecture in the paper establishes. It is established that the gradual decrease in thermal coefficient of resistance (TCR) during the transition from low-entropy (LEA) to high-entropy (HEA) alloys is explained by the fact that the resistivity in the direction of LEA HEA increases as a result of the decrease of the atoms mobility during the formation of basic phase and solid phase. It is shown that the temperature sensitivity of the resistance almost does not change depending on the entropy degree. The magnetic field dependences in all three measurement geometries differs only in amplitude and has all the GMR characteristics. It is concluded that the elements of granular state are realized in HEA films. At the same time, anisotropic magnetoresistance is observed for all cases of film material architecture under certain conditions which is caused not by spin-dependent electron scattering but by spin-orbital electron interaction, that is, the architecture of the samples does not play a prominent role.