{"title":"衬底型Cu(In, Ga)Se2太阳能电池，所有层均采用非真空溶液沉积方法","authors":"Shinsuke Nagino, Hiroyuki Suzuki, Shigehiro Ueno","doi":"10.1109/PVSC.2013.6745194","DOIUrl":null,"url":null,"abstract":"Cu(In, Ga)Se2 (CIGS) solar cells with all layers deposited using solution-based methods were demonstrated in order to investigate the utilization of wet process in CIGS photovoltaic cell fabrication. An active area efficiency of 7.7% was obtained. On the other hand, the highest efficiency of the cells with solution-processed CIGS and CdS layers was 15.3 %, which was about twice higher than that of all wet-coated cells. It was revealed that the quality of the ZnO nanoparticle layer, a lack of Na in the CIGS layer and the sheet resistance of SnO2:F back electrode limited the cell performance.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"130 1","pages":"3475-3479"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Substrate-type Cu(In, Ga)Se2 solar cells with all layers deposited by non-vacuum solution-based methods\",\"authors\":\"Shinsuke Nagino, Hiroyuki Suzuki, Shigehiro Ueno\",\"doi\":\"10.1109/PVSC.2013.6745194\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Cu(In, Ga)Se2 (CIGS) solar cells with all layers deposited using solution-based methods were demonstrated in order to investigate the utilization of wet process in CIGS photovoltaic cell fabrication. An active area efficiency of 7.7% was obtained. On the other hand, the highest efficiency of the cells with solution-processed CIGS and CdS layers was 15.3 %, which was about twice higher than that of all wet-coated cells. It was revealed that the quality of the ZnO nanoparticle layer, a lack of Na in the CIGS layer and the sheet resistance of SnO2:F back electrode limited the cell performance.\",\"PeriodicalId\":6350,\"journal\":{\"name\":\"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)\",\"volume\":\"130 1\",\"pages\":\"3475-3479\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2013.6745194\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2013.6745194","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Substrate-type Cu(In, Ga)Se2 solar cells with all layers deposited by non-vacuum solution-based methods
Cu(In, Ga)Se2 (CIGS) solar cells with all layers deposited using solution-based methods were demonstrated in order to investigate the utilization of wet process in CIGS photovoltaic cell fabrication. An active area efficiency of 7.7% was obtained. On the other hand, the highest efficiency of the cells with solution-processed CIGS and CdS layers was 15.3 %, which was about twice higher than that of all wet-coated cells. It was revealed that the quality of the ZnO nanoparticle layer, a lack of Na in the CIGS layer and the sheet resistance of SnO2:F back electrode limited the cell performance.
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