RE-BaTiO3-SiO2三元复合材料表征、建模、实验验证及介电性能的时域光谱研究

A. Brahimi, N. Bourouba, R. Delfouf, J. P. Martínez Jiménez, N. Bouzit
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引用次数: 1

摘要

本研究的目的是研究三元复合材料的介电行为,并利用时域谱(TDS)对三元模型简化为二元模型的预测模型进行实验验证。将分散的白色二氧化硅(SiO2)粉末与钛酸钡(BaTiO3或BT)粉末在相同的环氧树脂(RE)基体中均匀混合。在直流到30ghz的频率范围内,研究了这些复合材料样品的介电行为,特别增加了500 MHz的低频研究。BT的加入使混合介质介电常数从3.6063增加到8.2313,使谐振频率(ƒr)从26.245 GHz向低频方向移动到17.09 GHz。通过改进形状因子平滑并使理论和实验结果更接近,该研究旨在优化修改后的利希特纳克定律(MLL)。这些结果对比表明,MLL模型适用于三元复合材料(RE-BT-SiO2),具有可接受的精度水平。采用基于MLL方程的二元混合模型对RE-[RE- bt - sio2]复合材料进行了数值模拟。该模型的结果与二元复合材料的实验值以及用该定律建立的三元复合材料的实验值具有良好的相关性。这一研究方向在于微电子用新材料的生产,特别是MOS结构氧化物的改进。
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Characterization, Modeling, Experimental Validation and Dielectric Properties Studies of a Ternary Composite (RE-BaTiO3-SiO2) Using Time Domain Spectroscopy
This study aim is to investigate the ternary composites dielectric behavior and experimentally validate the predictive model that simplifies ternary models into binary ones using time domain spectroscopy (TDS). The scattered white silicon dioxide (SiO2) powder was evenly mixed with barium titanate (BaTiO3 or BT) powder in the same epoxy resin (RE) matrix. Over a frequency range from DC to 30 GHz, the dielectric behavior of these composite samples is examined, adding in particular a low frequency study at 500 MHz. The BT addition grew the mixture dielectric permittivity from 3.6063 to 8.2313 and moving the resonance frequency (ƒr) in the direction of the low frequency from 26.245 GHz until 17.09 GHz. By improving the shape factor smoothing and bringing theoretical and experimental results closer together, this seeks to optimize the modified Lichtenecker's law (MLL). These findings comparison demonstrates that the MLL model applies to ternary composites (RE-BT-SiO2) with an acceptable accuracy level. Another numerical method was used to evaluate the RE-[RE-BT-SiO2] composites employing a binary mixing model based on an MLL equation that is identical to the former ternary. This model results correlate well with binary composites experimental values as well as ternaries that are modeled using this law. This research perspective lies on the production of new materials for use in microelectronics and particularly on the MOS structure oxides improvement.
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