Jingyu Peng, X. Ji, Xingxing Zhang, Y. Liao, Feng Yan
{"title":"一种采用标准CMOS技术的新型双频太赫兹天线","authors":"Jingyu Peng, X. Ji, Xingxing Zhang, Y. Liao, Feng Yan","doi":"10.1109/CSTIC.2017.7919882","DOIUrl":null,"url":null,"abstract":"A dual-frequency antenna resonated at 0.32 THz and 0.65 THz has been analyzed and simulated for CMOS THz imaging and sensing systems. It includes the two rectified bowtie structures designed at metal and poly-Si layers in standard CMOS technology. Simulation results show that the antenna has the high gain and radiation efficiency and a great impedance matching comparing to the conventional metal dual-band antenna. The demonstrated design opens a brand new way for ease realization of multi-band on-chip THz antenna in CMOS technologies.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"160 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A novel dual-frequency terahertz antenna in standard CMOS technology\",\"authors\":\"Jingyu Peng, X. Ji, Xingxing Zhang, Y. Liao, Feng Yan\",\"doi\":\"10.1109/CSTIC.2017.7919882\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A dual-frequency antenna resonated at 0.32 THz and 0.65 THz has been analyzed and simulated for CMOS THz imaging and sensing systems. It includes the two rectified bowtie structures designed at metal and poly-Si layers in standard CMOS technology. Simulation results show that the antenna has the high gain and radiation efficiency and a great impedance matching comparing to the conventional metal dual-band antenna. The demonstrated design opens a brand new way for ease realization of multi-band on-chip THz antenna in CMOS technologies.\",\"PeriodicalId\":6846,\"journal\":{\"name\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"160 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC.2017.7919882\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919882","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel dual-frequency terahertz antenna in standard CMOS technology
A dual-frequency antenna resonated at 0.32 THz and 0.65 THz has been analyzed and simulated for CMOS THz imaging and sensing systems. It includes the two rectified bowtie structures designed at metal and poly-Si layers in standard CMOS technology. Simulation results show that the antenna has the high gain and radiation efficiency and a great impedance matching comparing to the conventional metal dual-band antenna. The demonstrated design opens a brand new way for ease realization of multi-band on-chip THz antenna in CMOS technologies.
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