{"title":"手机SDR的挑战与前景","authors":"U. Ramacher","doi":"10.1109/ICCD.2007.4601903","DOIUrl":null,"url":null,"abstract":"A nonvolatile semiconductor memory apparatus is provided which comprises a flip-flop circuit formed of a pair of MOS FETs and a pair of MNOS FETs coupled to the bistable output terminals of the flip-flop circuit, respectively. The memory apparatus further has a pair of MOS FETs coupled to have the current paths in parallel with the current paths of the pair of MOS FETs of the flip-flop circuit.","PeriodicalId":6306,"journal":{"name":"2007 25th International Conference on Computer Design","volume":"290 1","pages":"215-215"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Challenges and prospects of SDR for mobile phones\",\"authors\":\"U. Ramacher\",\"doi\":\"10.1109/ICCD.2007.4601903\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A nonvolatile semiconductor memory apparatus is provided which comprises a flip-flop circuit formed of a pair of MOS FETs and a pair of MNOS FETs coupled to the bistable output terminals of the flip-flop circuit, respectively. The memory apparatus further has a pair of MOS FETs coupled to have the current paths in parallel with the current paths of the pair of MOS FETs of the flip-flop circuit.\",\"PeriodicalId\":6306,\"journal\":{\"name\":\"2007 25th International Conference on Computer Design\",\"volume\":\"290 1\",\"pages\":\"215-215\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 25th International Conference on Computer Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCD.2007.4601903\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 25th International Conference on Computer Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCD.2007.4601903","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A nonvolatile semiconductor memory apparatus is provided which comprises a flip-flop circuit formed of a pair of MOS FETs and a pair of MNOS FETs coupled to the bistable output terminals of the flip-flop circuit, respectively. The memory apparatus further has a pair of MOS FETs coupled to have the current paths in parallel with the current paths of the pair of MOS FETs of the flip-flop circuit.
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