细线后端开发的进展

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI:10.1109/IITC-MAM.2015.7325601

R. Seidel, G. Bonsdorf, E. Clauss, J. Daleiden-, K. Donegan, F. Feustel, M. Hauschildt, B. Hintze, F. Koschinsky, G. Marxsen, R. Naumann, C. Peters, U. Queitsch, G. Talut, D. Theiss, M. Zinke

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引用次数: 0

摘要

在90nm间距的互连方面已经取得了实质性的改进。将提出优化图案和金属化的解决方案(例如，在蚀刻过程中进行ULK处理，通过湿式清洁完全去除金属硬掩膜，超薄PVD衬垫)。对于半导体代工厂来说，一个特别的挑战是客户特定设计和要求的带宽。新的设计依赖过程策略已经被开发出来。转移这种学习对于后续技术的成功发展至关重要。

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Progress in thin wire back-end of-line development

Substantial improvements have been achieved in interconnects with 90nm pitch. Solutions for an optimized patterning and metallization will be presented (e.g. ULK treatments during etch, complete metal hard-mask removal by wet-clean, ultra-thin PVD liner). A particular challenge for a semiconductor foundry is the band-width of customer specific designs and requirements. Novel design dependent process strategies have been developed. Transferring this learning will be crucial for a successful ramp of subsequent technologies.

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2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

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