离子源优化的计算机模拟

2008 IEEE 35th International Conference on Plasma Science Pub Date : 2008-06-15 DOI:10.1109/PLASMA.2008.4590683

I. Litovko, V. Gushenets, E. Oks

{"title":"离子源优化的计算机模拟","authors":"I. Litovko, V. Gushenets, E. Oks","doi":"10.1109/PLASMA.2008.4590683","DOIUrl":null,"url":null,"abstract":"Computer simulation for ion sources optimization used for ion implantations is reported. Highly stripped ion source is designed to provide high current beams of multiply charged phosphorous and boron ions for high energy ion implantation. Maximum current transport for boron ions is obtained with the optimisation of geometries of the ion-optical system and experimental setup. The maximum attainable percentage of singly charged B ions was 65% and the total current transport was about 60%.","PeriodicalId":6359,"journal":{"name":"2008 IEEE 35th International Conference on Plasma Science","volume":"124 1","pages":"1-1"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Computer simulation for ion sources optimization\",\"authors\":\"I. Litovko, V. Gushenets, E. Oks\",\"doi\":\"10.1109/PLASMA.2008.4590683\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Computer simulation for ion sources optimization used for ion implantations is reported. Highly stripped ion source is designed to provide high current beams of multiply charged phosphorous and boron ions for high energy ion implantation. Maximum current transport for boron ions is obtained with the optimisation of geometries of the ion-optical system and experimental setup. The maximum attainable percentage of singly charged B ions was 65% and the total current transport was about 60%.\",\"PeriodicalId\":6359,\"journal\":{\"name\":\"2008 IEEE 35th International Conference on Plasma Science\",\"volume\":\"124 1\",\"pages\":\"1-1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE 35th International Conference on Plasma Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PLASMA.2008.4590683\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE 35th International Conference on Plasma Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PLASMA.2008.4590683","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

本文报道了离子注入中离子源优化的计算机模拟。高剥离离子源的目的是为高能离子注入提供高电流的多电荷磷离子和硼离子束。通过优化离子光学系统的几何形状和实验装置，获得了硼离子的最大电流输运。单电荷B离子的最大可达率为65%，总电流输运率约为60%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Computer simulation for ion sources optimization

Computer simulation for ion sources optimization used for ion implantations is reported. Highly stripped ion source is designed to provide high current beams of multiply charged phosphorous and boron ions for high energy ion implantation. Maximum current transport for boron ions is obtained with the optimisation of geometries of the ion-optical system and experimental setup. The maximum attainable percentage of singly charged B ions was 65% and the total current transport was about 60%.

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2008 IEEE 35th International Conference on Plasma Science

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