{"title":"一种改善低压CMOS LDOs暂态负载调节的新电路技术","authors":"C. Stănescu","doi":"10.1109/SMICND.2012.6400756","DOIUrl":null,"url":null,"abstract":"The paper presents a new circuit technique intended to improve the transient load regulation in dual-OTA CMOS LDOs, especially for low input and output voltages. The duration of overshoot that appears during fast transient load regulation is made quite small, improving the recovery of the output voltage when the output current is swept from maximum to minimum within 100ns. The presented technique is simple and needs a small number of additional components. The additional bias current is only few μA.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"54 1","pages":"373-376"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new circuit technique for improving transient load regulation in low-voltage CMOS LDOs\",\"authors\":\"C. Stănescu\",\"doi\":\"10.1109/SMICND.2012.6400756\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents a new circuit technique intended to improve the transient load regulation in dual-OTA CMOS LDOs, especially for low input and output voltages. The duration of overshoot that appears during fast transient load regulation is made quite small, improving the recovery of the output voltage when the output current is swept from maximum to minimum within 100ns. The presented technique is simple and needs a small number of additional components. The additional bias current is only few μA.\",\"PeriodicalId\":9628,\"journal\":{\"name\":\"CAS 2012 (International Semiconductor Conference)\",\"volume\":\"54 1\",\"pages\":\"373-376\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CAS 2012 (International Semiconductor Conference)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2012.6400756\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400756","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new circuit technique for improving transient load regulation in low-voltage CMOS LDOs
The paper presents a new circuit technique intended to improve the transient load regulation in dual-OTA CMOS LDOs, especially for low input and output voltages. The duration of overshoot that appears during fast transient load regulation is made quite small, improving the recovery of the output voltage when the output current is swept from maximum to minimum within 100ns. The presented technique is simple and needs a small number of additional components. The additional bias current is only few μA.