90nm CMOS技术下带ALF电荷泵的低压锁相环设计与仿真

Dhwani P. Sametriya, Nisarg M. Vasavada, Dipika S. Vasava
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引用次数: 1

摘要

随着VLSI技术的普及和电子器件的小型化、密实化、智能化、长寿命化,低电压适用性和低功耗领域的研究正在向全方位发展,其中一个方向是在锁相环的基础上实现更快、更精确的时钟生成。是时候打破著名的硅谷黄金法则之一了,即“时钟频率越高,功耗越大”。考虑到功耗和功耗之间微不足道的关系,降低电源电压是降低功耗的最有效方法。在较低的电源电压下,优化锁相环的每个模块以实现低电压操作是一项挑战。提出了一种低压高频ALF电荷泵锁相环。它采用带有源环路滤波器的差分电荷泵来补偿电流失配并减少参考杂散。采用体偏置技术设计了一种电压控制振荡器,具有宽捕获范围和低功耗的特点。D触发器PFD采用TSPC动态逻辑设计,实现零死区或最小死区,能够检测大的相位和频率差。
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Design and simulation of LV PLL with ALF D-charge pump in 90 nm CMOS technology
With the prevalence of VLSI technology and electronics devices becoming smaller, denser, smarter and long lasting, the research in the field of low voltage applicability and low power consumption is turning omnidirectional among which one direction leads towards the depth of faster and precise clock generation which is achieved on the foundation of PLL. The time has come to break one of the famous Silicon Valley golden rules which states "Higher the clock frequency, Greater the power consumption". Keeping the trivial relationship between power consumption and power dissipation in mind, lowering supply voltages is the most effective method to reduce power consumption. At lower supply voltage, it is challenging to optimize each block of PLL for Low Voltage operations. A Low voltage High Frequency ALF Charge Pump PLL is proposed. It employs a differential Charge pump with an active loop filter to compensate current mismatch and reduces reference spurs. A Voltage Controlled Oscillator is designed with body bias technique providing wide capture range and low power consumption. A D Flip Flop PFD is designed with TSPC dynamic logic to achieve zero or minimum dead zone and is able to detect large phase and frequency difference.
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