Tappei Nishihara, T. Kamioka, Hiroki Kanai, Y. Ohshita, H. Matsumura, S. Yasuno, I. Hirosawa, A. Ogura
{"title":"RPD技术制备ITO/a-Si界面的评价","authors":"Tappei Nishihara, T. Kamioka, Hiroki Kanai, Y. Ohshita, H. Matsumura, S. Yasuno, I. Hirosawa, A. Ogura","doi":"10.1109/PVSC40753.2019.8980657","DOIUrl":null,"url":null,"abstract":"We evaluated the ITO/p-type a-Si interface for Si heterojunction solar cells using XPS and TEM. It was found that ITO/a-Si interface which is 20 nm from the surface is oxidized by using non-destructive and non-contact HAXPES. The ITO/a-Si interface was oxidized during ITO film deposition by RPD technique, which leads to an increase in contact resistance. The chemical bonding states at the ITO/a-Si interface was modified by post deposition annealing (PDA). The TEM and the EDX mapping images revealed the interdiffusion of Si and Sn resulting in the interface roughness enhancement and the possible In precipitation in the a-Si layer.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"105 1","pages":"2702-2704"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evaluation of ITO/a-Si Interface Fabricated by RPD Technique\",\"authors\":\"Tappei Nishihara, T. Kamioka, Hiroki Kanai, Y. Ohshita, H. Matsumura, S. Yasuno, I. Hirosawa, A. Ogura\",\"doi\":\"10.1109/PVSC40753.2019.8980657\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We evaluated the ITO/p-type a-Si interface for Si heterojunction solar cells using XPS and TEM. It was found that ITO/a-Si interface which is 20 nm from the surface is oxidized by using non-destructive and non-contact HAXPES. The ITO/a-Si interface was oxidized during ITO film deposition by RPD technique, which leads to an increase in contact resistance. The chemical bonding states at the ITO/a-Si interface was modified by post deposition annealing (PDA). The TEM and the EDX mapping images revealed the interdiffusion of Si and Sn resulting in the interface roughness enhancement and the possible In precipitation in the a-Si layer.\",\"PeriodicalId\":6749,\"journal\":{\"name\":\"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)\",\"volume\":\"105 1\",\"pages\":\"2702-2704\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC40753.2019.8980657\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC40753.2019.8980657","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of ITO/a-Si Interface Fabricated by RPD Technique
We evaluated the ITO/p-type a-Si interface for Si heterojunction solar cells using XPS and TEM. It was found that ITO/a-Si interface which is 20 nm from the surface is oxidized by using non-destructive and non-contact HAXPES. The ITO/a-Si interface was oxidized during ITO film deposition by RPD technique, which leads to an increase in contact resistance. The chemical bonding states at the ITO/a-Si interface was modified by post deposition annealing (PDA). The TEM and the EDX mapping images revealed the interdiffusion of Si and Sn resulting in the interface roughness enhancement and the possible In precipitation in the a-Si layer.
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